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MMA003AA

MMA003AA

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    IC RF AMP 2GHZ-22GHZ

  • 数据手册
  • 价格&库存
MMA003AA 数据手册
MMA003AA 2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier Features • >15dBm P1dB with 1.8dB NF and 13dB gain at 10GHz • Gain flatness ~ +/-0.75dB • 10 hours at TC = 150°C 8 Table 2: Specifications (CW, 100% Test): TA = 25°C, VDD = 5V, IDD = 65mA Parameter Frequency Min Max Units - - 90 mA Small Signal Gain 20GHz 11.0 - dB Output Power, P1dB 20GHz 8.5 - dBm IDD RF Probe Measurement Set-Up With Reference Planes2 TO VDD 100nF CAPACITOR TO GROUND 100pF CAPACITOR TO GROUND RFOUT RFIN MINIMIZE GAP 50 TRANSMISSION LINE 2 1mil Au wire used for all bonds Reference planes are the same for S-parameter files downloadable on www.microsemi.com/mmics MM-PDS-0004 Rev B Subject to Change Without Notice 2 of 10 MMA003AA Typical Performance, RF Probe            S11Over Temperature  S22 Over Temperature                      S21 Over Temperature                                                        P1dB Over Frequency            P3dB Over Frequency       NF Over Temperature         VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted           MM-PDS-0004 Rev B Subject to Change Without Notice                3 of 10 MMA003AA Typical Performance, RF Probe VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted             IMD Sweep Over Frequency       OIP3 Over Frequency                                           Power Sweep Over Frequency                              MM-PDS-0004 Rev B Subject to Change Without Notice     4 of 10 MMA003AA Connectorized Test Fixture With SMK 2.92mm Connectors VD1 Feedthru 0.1uF 100pF RFIN RFOUT 1.000 0.950 MM-PDS-0004 Rev B Subject to Change Without Notice 5 of 10 MMA003AA Typical Performance, Connectorized Test Fixture VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted S11Over Temperature                              S21 Over Temperature                                                              P3dB Over Frequency                P1dB Over Frequency   NF Over Temperature                 S22 Over Temperature                MM-PDS-0004 Rev B Subject to Change Without Notice                6 of 10 MMA003AA Typical Performance, Connectorized Test Fixture VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted                   Power Sweep, +25°C       Power Sweep, -40°C                                                                                    MM-PDS-0004 Rev B Subject to Change Without Notice                                    IMD3 Sweep, -40°C       OIP3, POUT/tone = 0dBm OIP3, POUT/tone = 3dBm              Power Sweep, +85°C                                       7 of 10 MMA003AA Typical Performance, Connectorized Test Fixture VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted IMD3 Sweep, +25°C          IMD3 Sweep, +85°C                                                                  DC                      MM-PDS-0004 Rev B Subject to Change Without Notice     8 of 10 MMA003AA Chip layout showing pad locations. All dimensions are in microns. Die thickness is 100 microns. Backside metal is gold, bond pad metal is gold. Refer to Die Handling Application Note MM-APP-0001 (visit www.microsemi.com/mmics). 113 4 5 6 1500 1216 3 1034 838 2 517 322 1 126 54 2616 2820 Table 3: Pad Descriptions Pad # Descrtiption Pad Dimensions (µm) 1, 3, 6 Ground 100 x 100 2 RFIN, Pad is AC Coupled 100 x 190 5 RFOUT, Pad is AC Coupled 100 x 190 4 VDD 100 x 100 Biasing MMA003AA is a self-biased device with single positive supply. Apply VDD to pad 4. MM-PDS-0004 Rev B Subject to Change Without Notice 9 of 10 MMA003AA Information contained in this document is proprietary to Microsemi. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has approximately 3,400 employees globally. Learn more at www.microsemi.com. © 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. MM-PDS-0004 Rev B Subject to Change Without Notice 10 of 10
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