MMA003AA
2-22GHz, 13dB Gain Low-Noise
Wideband Distributed Amplifier
Features
• >15dBm P1dB with 1.8dB NF and
13dB gain at 10GHz
• Gain flatness ~ +/-0.75dB
• 10 hours at TC = 150°C
8
Table 2: Specifications (CW, 100% Test): TA = 25°C, VDD = 5V, IDD = 65mA
Parameter
Frequency
Min
Max
Units
-
-
90
mA
Small Signal Gain
20GHz
11.0
-
dB
Output Power, P1dB
20GHz
8.5
-
dBm
IDD
RF Probe Measurement Set-Up With Reference Planes2
TO VDD
100nF CAPACITOR
TO GROUND
100pF CAPACITOR
TO GROUND
RFOUT
RFIN
MINIMIZE GAP
50 TRANSMISSION LINE
2
1mil Au wire used for
all bonds
Reference planes are the same for S-parameter files downloadable on www.microsemi.com/mmics
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MMA003AA
Typical Performance, RF Probe
S11Over Temperature
S22 Over Temperature
S21 Over Temperature
P1dB Over Frequency
P3dB Over Frequency
NF Over Temperature
VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted
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MMA003AA
Typical Performance, RF Probe
VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted
IMD Sweep Over Frequency
OIP3 Over Frequency
Power Sweep Over Frequency
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MMA003AA
Connectorized Test Fixture
With SMK 2.92mm Connectors
VD1 Feedthru
0.1uF
100pF
RFIN
RFOUT
1.000
0.950
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MMA003AA
Typical Performance, Connectorized Test Fixture
VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted
S11Over Temperature
S21 Over Temperature
P3dB Over Frequency
P1dB Over Frequency
NF Over Temperature
S22 Over Temperature
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MMA003AA
Typical Performance, Connectorized Test Fixture
VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted
Power Sweep, +25°C
Power Sweep, -40°C
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IMD3 Sweep, -40°C
OIP3, POUT/tone = 0dBm
OIP3, POUT/tone = 3dBm
Power Sweep, +85°C
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MMA003AA
Typical Performance, Connectorized Test Fixture
VDD = 5V, IDD = 50mA, TA = 25°C unless otherwise noted
IMD3 Sweep, +25°C
IMD3 Sweep, +85°C
DC
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MMA003AA
Chip layout showing pad locations.
All dimensions are in microns. Die thickness is 100 microns. Backside metal is gold, bond pad metal is gold.
Refer to Die Handling Application Note MM-APP-0001 (visit www.microsemi.com/mmics).
113
4
5
6
1500
1216
3
1034
838
2
517
322
1
126
54
2616
2820
Table 3: Pad Descriptions
Pad #
Descrtiption
Pad Dimensions (µm)
1, 3, 6
Ground
100 x 100
2
RFIN, Pad is AC Coupled
100 x 190
5
RFOUT, Pad is AC Coupled
100 x 190
4
VDD
100 x 100
Biasing
MMA003AA is a self-biased device with single positive supply. Apply VDD to pad 4.
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MMA003AA
Information contained in this document is proprietary to Microsemi. This document may not be modified in any way without the express
written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to
change the configuration and performance of the product and to discontinue product at any time.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo CA 92656 USA
Within the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor
and system solutions for communications, defense and security, aerospace, and industrial
markets. Products include high-performance and radiation-hardened analog mixed-signal
integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing and
synchronization devices and precise time solutions, setting the world’s standard for time;
voice processing devices; RF solutions; discrete components; security technologies and
scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom
design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has
approximately 3,400 employees globally. Learn more at www.microsemi.com.
© 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other
trademarks and service marks are the property of their respective owners.
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