MMAD1106E3

MMAD1106 and MMAD1106e3 Switching Diode Array Steering Diode TVS Array™ SCOTTSDALE DIVISION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-pin package for use as steering diodes protecting up to eight I/O ports from negative ESD, EFT, or surge by directing them to ground (pin 14)*. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with either Tin-Lead plating terminations or as RoHS Compliant with annealed matte-Tin finish by adding an “e3” suffix to the part number. *See MMAD1105(e3) for directing positive transients to positive side of the power supply line. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM Top Viewing Pin Layout FEATURES • • • • • • • 8 Diode Array Molded 14-Pin SOIC Package UL 94V-0 Flammability Classification Low Capacitance 1.5 pF per diode Switching speeds less than 5 ns RoHS Compliant devices available by adding “e3” suffix IEC 61000-4 compatible 61000-4-2 (ESD): Air 15kV, contact – 8 kV 61000-4-4 (EFT): 40A – 5/50 ns 61000-4-5 (surge): 12A, 8/20 µs • • • • • • APPLICATIONS / BENEFITS Low capacitance steering diode protection for high frequency data lines RS-232 & RS-422 Interface Networks Ethernet: 10 Base T Computer I / O Ports LAN Switching Core Drivers MAXIMUM RATINGS • • • • • • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Forward Surge Current: 2 Amps (8.3 ms) 12 Amps (8/20 µs) Continuous Forward Current: 400 mA (one diode) Power Dissipation (PD): 1500 mW (total) Solder Temperatures: 260°C for 10 s (maximum) • • • • • • BREAKDOWN VOLTAGE VBR @ IBR =100µA V MIN MMAD1106 MMAD1106e3 90 WORKING PEAK REVERSE VOLTAGE VRWM V MAX 75 LEAKAGE CURRENT IR TA = 25°C µA MAX 0.200 @VR 20 MAX 300 LEAKAGE CURRENT IR TA = 150°C µA @VR 20 MECHANICAL AND PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification TERMINALS: Tin-Lead or RoHS Compliant annealed matte-Tin plating solderable per MILSTD-750 method 2026 MARKING: MSC logo, MMAD1106 or MMAD1106e3 and date code. Pin #1 is to the left of the dot or indent on top of package WEIGHT: 0.127 grams (approximate) Tape & Reel packaging: 2500 pcs (STANDARD) Carrier tube packaging: 55 pcs MMAD1106, e3 ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified CAPACITANCE C @0V pF TYP 1.5 REVERSE RECOVERY TIME trr ns MAX 5.0 FORWARD VOLTAGE VF IF = 10 mA V MAX 1.00 FORWARD VOLTAGE VF IF = 100 mA V MAX 1.20 PART NUMBER Copyright © 2005 6-28-2005 REV K Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 MMAD1106 and MMAD1106e3 Switching Diode Array Steering Diode TVS Array™ SCOTTSDALE DIVISION Symbol VBR VRWM VF IR C SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. W WW . Microsemi . C OM OUTLINE AND CIRCUIT INCHES DIM A MILLIMETERS MIN MAX 8.53 8.74 3.81 4.01 1.35 1.75 0.28 0.53 0.41 1.27 01.27 BSC 0.15 0.25 0.10 0.20 4.80 5.23 5.79 6.19 B C D F G J K L P MIN MAX 0.336 0.344 0.150 0.158 0.053 0.069 0.011 0.021 0.016 0.050 0.050 BSC 0.006 0.010 0.004 0.008 0.189 0.206 0.228 0.244 OUTLINE CIRCUIT CONFIGURATION MMAD1106, e3 PAD LAYOUT Copyright © 2005 6-28-2005 REV K Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2