MMAD1109

MMAD1109 and MMAD1109e3 Switching Diode Array Steering Diode TVS Array™ SCOTTSDALE DIVISION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with either Tin-Lead plating terminations or as RoHS Compliant with annealed matte-Tin finish by adding an “e3” suffix to the part number. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM Top Viewing Pin Layout FEATURES • • • • • • • 7 Diode Array / protects 7 lines Molded 14-Pin SOIC Package UL 94V-0 Flammability Classification Low Capacitance 1.5 pF per diode Switching speeds less than 5 ns RoHS Compliant devices available by adding “e3” suffix IEC 61000-4 compatible 61000-4-2 (ESD): Air 15kV, contact – 8 kV 61000-4-4 (EFT): 40A – 5/50 ns 61000-4-5 (surge): 12A, 8/20 µs APPLICATIONS / BENEFITS • Low capacitance steering diode protection for high frequency data lines • RS-232 & RS-422 Interface Networks • Ethernet: 10 Base T • Computer I / O Ports • LAN • Switching Core Drivers MAXIMUM RATINGS • • • • • • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Forward Surge Current: 2 Amps (8.3 ms) 12 Amps (8/20 µs) Continuous Forward Current: 400 mA (one diode) Power Dissipation (PD): 1500 mW (total) Solder Temperature: 260°C for 10 s (maximum) MECHANICAL AND PACKAGING • CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification • TERMINALS: Tin-Lead or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD750 method 2026 • MARKING: MSC logo, MMAD1107 or MMAD1107e3 and date code. Pin #1 is to the left of the dot or indent on top of package • WEIGHT: 0.127 grams (approximate) • Tape & Reel packaging: 2500 pcs (STANDARD) • Carrier tube packaging: 55 pcs MMAD1109, e3 ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified BREAKDOWN VOLTAGE VBR @ IBR =100µA V MIN MMAD1109 MMAD1109e3 90 WORKING PEAK REVERSE VOLTAGE VRWM V MAX 75 LEAKAGE CURRENT IR TA = 25°C µA MAX 0.200 @VR 20 MAX 300 LEAKAGE CURRENT IR TA = 150°C µA @VR 20 CAPACITANCE C @0V pF TYP 1.5 REVERSE RECOVERY TIME trr ns MAX 5.0 FORWARD VOLTAGE VF IF = 10 mA V MAX 1.00 FORWARD VOLTAGE VF IF = 100 mA V MAX 1.20 PART NUMBER Copyright © 2005 6-28-2005 REV K Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 MMAD1109 and MMAD1109e3 Switching Diode Array Steering Diode TVS Array™ SCOTTSDALE DIVISION Symbol VBR VRWM VF IR C SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. W WW . Microsemi . C OM OUTLINE AND CIRCUIT Supply rail (+VCC) I/O Port GND (or -VCC) STEERING DIODE APPLICATION figure 1 INCHES DIM A B C D E F G H I J MIN 0.740 0.235 0.120 0.270 0.320 0.015 0.017 0.140 0.040 MAX 0.780 0.265 0.140 0.330 0.380 0.100 BSC 0.021 0.023 0.160 0.070 MILLIMETERS MIN 18.80 5.969 3.048 6.858 8.128 0.381 0.431 3.556 1.016 MAX 19.81 6.731 3.556 8.382 9.652 2.540 BSC 0.533 0.584 4.064 1.778 OUTLINE MMAD1109, e3 CIRCUIT CONFIGURATION PAD LAYOUT Copyright © 2005 6-28-2005 REV K Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2