MMBR5179LT1

MMBR5179LT1 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES W W W . Microsemi . COM The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! High FTau-1.4GHz ! Low noise-4.5dB@200MHz EL PR Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! Low cost SOT23 package ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) APPLIC APPLICATIONS/BENEFITS Value 20 12 2.5 50 375 150 -55 to +150 Unit V V V mA mW C C ! LNA, Oscillator, Pre-Driver IM 200 Conditions IE = 0 IB = 0 IE = 0 IC = 3 mA Conditions RTH(j-c) Junction-Case Thermal Resistance C/W SOT-23 MMBR5179LT1 STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Y AR IN Min. 20 12 25 Typ. Max. Units V V uA 0.02 Min. Typ. 1.4 4.5 14 Max. 1.0 Units PF GHz Symbol BVCBO BVCEO I CBO hFE Test IC = .01mA IC =3mA VEB = 15V VCB = 1 V DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) MMBR5179LT1 Symbol CCB FTau NF Gpe Test VCB = 10 V f = 1.0 MHz VCE = 6 V IC= 5 mA f = 200MHz VCE = 6 V IC= 1.5 mA f = 200MHz VCE = 6 V IC= 5 mA f = 200MHz dB dB Copyright 2000 PDF 2000-11-06 RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Microsemi Page 1 of 1