MRF1001

MRF1001

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MRF1001 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation

  • 数据手册
  • 价格&库存
MRF1001 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, G U max 2 = 11.5 dB (typ) @ 300 MHz, 14v, 90mA 1. Emitter 2. Base 3. Collector |S21| = 11 dB (typ) @ 300 MHz, 14v, 90mA TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 30 3.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.71 Watts mW/ ºC MSC1311.PDF 10-25-99 MRF1001A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVEBO BVCBO ICBO VCE(sat) Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc) Emitter-Base Breakdown Voltage (IC= 0.1 mAdc) Collector-Base Breakdown Voltage (IC=1.0 mAdc) Collector-Base (VCB = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 50mA, IC/IB = 10) 20 3.5 30 Value Typ. 50 100 Max. Unit Vdc Vdc Vdc µA mV (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 300 - DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 90 mAdc, VCE = 14 Vdc, f = 300 MHz) Value Typ. 3.0 Max. Unit GHz MSC1311.PDF 10-25-99 MRF1001A FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 90 mAdc, VCE = 14Vdc, f = 300 MHz IC = 90 mAdc, VCE = 14Vdc, f = 300 MHz IC = 90 mAdc, VCE = 14Vdc, f = 300 MHz Value Typ. 11.5 11.7 11.13 Max. Unit dB dB dB G U max 10 MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 14 V, IC = 90 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .165 .113 .061 .003 .063 .069 .135 .179 .282 .362 ∠φ -17 -77 63 -49 117 140 150 144 146 132 S21 |S21| 9.7 5.2 3.6 2.7 2.3 1.9 1.9 1.7 1.6 1.5 ∠φ 98 80 76 66 57 54 48 39 33 36 S12 |S12| .058 .115 .169 .225 .281 .320 .397 .447 .476 .510 ∠φ 79 73 76 68 61 60 58 49 44 47 S22 |S22| .411 .302 .298 .287 .235 .245 .232 .237 .215 .220 ∠φ -32 -36 -42 -67 -80 -90 -104 -124 -157 -177 MSC1311.PDF 10-25-99 MRF1001A MSC1311.PDF 10-25-99
MRF1001 价格&库存

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