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MRF517

MRF517

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    TO39-3

  • 描述:

    RF Transistor NPN 20V 150mA 4GHz 2.5W Through Hole TO-39

  • 详情介绍
  • 数据手册
  • 价格&库存
MRF517 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Gpe = 10 dB (typ) @ 60 mA, 300 MHz 3 GHz Current-Gain Bandwidth Product (min) @ 60mA Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; predriver, driver, and output stages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 35 3.0 150 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 2.5 0.02 Watts mW/ ºC MSC1302.PDF 10-25-99 MRF517 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 330 ohms) Collector-Emitter Breakdown Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IB = 0) 25 20 30 3.0 Value Typ. Max. 100 Unit Vdc Vdc Vdc Vdc µAdc (on) HFE DC Current Gain (IC = 60 mAdc, VCE = 10 Vdc) 50 150 - DYNAMIC Symbol fT Cob Test Conditions Min. Current-Gain - Bandwidth Product (IC = 60 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) 3 Value Typ. 4 3.0 Max. 4.5 Unit GHz pF MSC1302.PDF 10-25-99 MRF517 FUNCTIONAL Symbol NF Test Conditions Min. Broadband Noise Figure (IC = 50 mAdc, VCE = 15Vdc, f = 300 MHz Common Emitter Amplifier Power Gain (VCE = 15 Vdc, IC = 60 mAdc, f = 300MHz 9 Value Typ. 10 Max. 7.5 Unit dB dB Gpe POUT (R L= 50 OHMS) PIN (R S=50 OHMS) +15Vdc +VBB Figure 1. 40 to 330 MHz Broadband Test Schematic MSC1302.PDF 10-25-99 MRF517 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) (MHz) Pout (watts) (Watts) GPE (dB) Efficiency (%) IC max (mA) Gu Max (dB) BVCEO IC max (mA) 20 400 30 400 30 400 1 1 3 1 1 1 2.6 12 15 50 40 25 150 15 15 12 30 50 35 15 100 15 200 15 200 1 15 15 12 30 50 40 16 200 2.2 0.45 1 1 1 2 17 200 10 100 10 12 15 70 70 70 35 30 400 400 Freq (MHz) NF (dB) NF IC (mA) NF VCE Package GN (dB) Ftau (MHz) 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 5000 5000 1400 1500 GPE VCC BVCEO Device SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 400 400 500 500 330 1000 50 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 6 6 5 10 15 11 14 10 8 10 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 17 3.5 MRF5943, R1, R2 NPN 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 NPN NPN NPN NPN NPN NPN NPN MA C R O X MA C R O X TO-39 SO-8 PO W ER MA C R O PO W ER MA C R O MA C R O X MA C R O X SO-8 PO W ER MA C R O PO W ER MA C R O MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 512 NPN 512 NPN 400 NPN 470 NPN 470 NPN 870 NPN 870 NPN 870 NPN 870 NPN 870 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 16 16 30 30 16 16 16 16 16 16 16 150 150 400 400 400 400 150 150 200 400 400 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 MACRO X MACRO X MACRO T MACRO T TO-39 TO-39 MRF5812, R1, R2 NPN MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 NPN NPN NPN NPN NPN NPN MRF3866, R1, R2 NPN 400 NPN 1000 NPN 1000 NPN 1000 NPN 1000 PNP NPN 11 12.5 14 13.5 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 2 3 2 4 3 1 1 4 Macro T MSC1302.PDF 10-25-99 Macro X Power Macro SO-8 Ccb(pF) Device Type Type MRF517 MSC1302.PDF 10-25-99
MRF517
1. 物料型号: - 型号为MRF517,由Microsemi公司生产。

2. 器件简介: - MRF517是一款硅NPN晶体管,采用TO-39封装,设计用于VHF和UHF设备。适用于低噪声宽带放大器、前置驱动、驱动和输出阶段。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 基极(Base) - 3. 集电极(Collector)

4. 参数特性: - 典型增益(Gpe)为10dB,频率为300MHz时,电流为60mA。 - 3GHz电流增益带宽积(ft),电流为60mA时。 - 宽带噪声系数为7.5dB,频率为300MHz时,电流为50mA。

5. 功能详解: - 该器件为低功耗VHF/UHF晶体管,具有低噪声和宽带宽特性,适用于宽带放大器和射频应用。

6. 应用信息: - 适用于低噪声宽带放大器、前置驱动、驱动和输出阶段。

7. 封装信息: - 采用TO-39封装。
MRF517 价格&库存

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