MRF545

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC Storage Temperature Range -65 to +200 ºC 3.5 20 Watts mW/ ºC Tstg MSC1315.PDF 10-25-99 MRF545 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) 70 100 3.0 Value Typ. 1.0 Max. 20 100 Unit Vdc Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 - DYNAMIC Symbol Test Conditions Min. COB CIB CCB fT Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz) 1000 Value Typ. 2.5 5.4 2.8 1400 Max. 3.2 Unit pF pF pF MHz MSC1315.PDF 10-25-99 MRF545 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz Value Typ. 14 14.5 12.5 Max. Unit dB dB dB G U max 11.5 MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| 0.139 0.162 0.522 0.260 0.275 0.262 0.333 0.327 0.517 0.463 ∠φ -105 -168 130 129 133 123 118 122 97 115 S21 |S21| 7.43 4.35 1.7 2.23 1.74 1.49 0.951 1.3 1.21 1.07 ∠φ 101 80 75 63 54 46 45 35 30 27 S12 |S12| 0.031 0.066 0.113 0.154 0.188 0.226 0.925 0.379 0.402 0.437 ∠φ 83 82 85 85 71 74 75 66 61 63 S22 |S22| 0.573 0.508 0.493 0.487 0.445 0.495 0.456 0.424 0.393 0.375 ∠φ -19 -23 -29 -43 -53 -69 -71 -85 -109 -115 MSC1315.PDF 10-25-99 MRF545 MSC1315.PDF 10-25-99