MRF553GT

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 16 Unit Vdc VCBO Collector-Base Voltage 36 Vdc VEBO Emitter-Base Voltage 4.0 Vdc IC Collector Current 500 mA 3.0 40 Watts mW/ ºC Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF553 MRF553G ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCES BVCBO BVEBO ICES Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) 16 - - Vdc Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) 36 - - Vdc Collector-Base Breakdown Voltage (IE = 0, IC = 5 mAdc) 36 - - Vdc Emitter-Base Breakdown Voltage (IE = 1 mAdc, IC = 0) 4.0 - - Vdc - - 5 mA 30 - 200 - Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) (on) HFE DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) Both DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Min. Typ. Max. Unit - 12 20 pF Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF553 MRF553G FUNCTIONAL Symbol Test Conditions Power Gain GPE Collector Efficiency η ψ Load Mismatch VSWR ≥ 10:1 All Phase Angles Test Circuit-Figure 1 Pout = 1.5 W, VCE =12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 1.5 W, VCE =12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 1.5 W, VCE =12.5Vdc f = 175 MHz Value Min. Typ. Max. Unit 11.5 13 - dB 50 60 - % No Degradation in Output Power - Figure 1. 140–175 MHz Broadband Circuit Schematic. C1 — 36 pF Mini Underwood C2 — 47 pF Mini Underwood C3 — 91 pF Mini Underwood C4 — 68 pF Mini Underwood C5, C9 — 1.0 µF Erie Red Cap Capacitor C6, C10 — 0.1 µF, 35 V Tantulum C7 — 470 pF Chip Capacitor C8 — 2200 pF Chip Capacitor R1 — 4.7 kΩ, 1/4 W R2 — 100 Ω, 1/4 W D1 — 1N4148 Diode L1 — 3 Turns, #18 AWG, 0.210, ID, 3/16, Length L2, L4, L7 — 0.62,, #18 AWG Wire Bent into “V” L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27Mils L5 — 12 µH Molded Choke L8 — 7 Turns, #18 AWG, 0.170, ID, 7/16, Length L9 — 1.0,, #18 AWG Wire with 5 Ferrite Beads B — Ferrite Bead Thick Alumina Substrate Board Material — Glass Teflon, ε r = 2.56, t = 0.0625, Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF553 MRF553G MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 512 512 400 400 470 470 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 0.5 0.5 1 1 1.5 1.5 10 13 10 10 11 11 65 7.5 16 150 60 12.5 16 150 45 28 30 400 45 28 30 400 50 12.5 16 400 50 12.5 16 400 MACRO X MRF559 NPN 870 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER MACRO MRF557T NPN 870 1.5 6.5 9.5 8 8 8 70 65 55 55 55 7.5 12.5 12.5 12.5 12.5 16 16 16 16 16 150 150 200 400 400 TO-39 TO-39 SO-8 2N5109 NPN 200 3 10 15 MRF5943C NPN 200 3.4 30 15 3.4 30 15 15 MRF5943, R1, R2 NPN 200 12 Ftau (MHz) 1200 Ccb(pF) BVCEO IC max (mA) GN (dB) Gu Max (dB) Freq (MHz) NF (dB) NF IC (mA) NF VCE Type Device Package IC max (mA) BVCEO 18 10 11.5 11.5 11.5 7.8 20 GPE VCC 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 Efficiency (%) GPE Freq (MHz) GPE (dB) MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 Pout (watts) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 Type Device Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 3.5 11.4 1000 20 400 30 400 1300 30 400 TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50 TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 40 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 MACRO T BFR91 NPN 500 1.9 2 5 16.5 5000 1 12 35 MACRO T SO-8 BFR96 NPN 500 MRF5812, R1, R2 NPN 500 MACRO X MRF581A NPN 500 2 10 11 10 14.5 500 2.6 30 15 100 2 50 10 15.5 17.8 5000 15 200 2 50 10 14 15 5000 15 200 15 Macro BFR90 NPN 500 2.4 2 10 18 5000 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MACRO X MRF581 NPN 500 2.5 50 10 3 15 17.8 5000 90 15 11 14.5 4500 5 14 TO-39 MRF586 NPN 500 MACRO X MRF951 NPN 1000 1.3 MACRO X MRF571 MACRO T BFR91 NPN 1000 2.5 2 5 8 MACRO T BFR90 NPN 1000 2 10 10 TO-39 MRF545 PNP TO-39 MRF544 NPN NPN 1000 1.5 10 3 6 6 1 15 30 16 200 2.2 17 200 17 8000 0.45 10 100 8000 1 10 70 11 5000 1 12 35 12.5 5000 1 15 30 2 70 400 10 14 1400 13.5 1500 70 400 RF (LNA / General Purpose) Selection Guide RF (Low Power PA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 8 2 4 2 1 4 4 3 3 Macro T Macro X Power Macro SO-8 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF553 MRF553G PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 2. 4. 3. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005