MRF581

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal Data P P D D Total Device Dissipation @ TC = 50ºC Derate above 50ºC Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC 2.5 25 1.25 10 Watts mW/ ºC Watts mW/ ºC Tstg TJmax MSC1318.PDF 10-25-99 MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Collector Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) MRF581 MRF581A Min. 18 15 30 2.5 Value Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 MRF581A 50 90 200 250 - DYNAMIC Symbol COB Ftau Test Conditions Min. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Typ. 2.0 5.0 Max. 3.0 Unit pF GHz MSC1318.PDF 10-25-99 MRF581/MRF581A FUNCTIONAL Symbol Test Conditions Min. NFmin Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Power Gain @ NFmin (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz MRF581 MRF581A 13 14 Value Typ. 2.5 2.0 15.5 17.8 20 15 Max. 3.0 3.0 Unit dB dB dB dB dB G G NF U max MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .610 .659 .671 .675 .677 .678 .677 .679 .678 .682 ∠φ -137 -161 -171 -178 176 172 168 184 160 156 S21 |S21| 23.8 13.2 9.0 6.8 5.5 4.6 4.0 3.5 3.1 2.8 ∠φ 116 98 89 83 77 72 68 64 60 56 S12 |S12| .026 .033 .040 .047 .055 .064 .073 .082 .092 .102 ∠φ 46 47 51 55 58 61 62 63 64 65 S22 |S22| .522 .351 .304 .292 .293 .299 .306 .314 .322 .311 ∠φ -78 -106 -120 -128 -132 -134 -135 -136 -138 -139 MSC1318.PDF 10-25-99 MRF581/MRF581A C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor C7, C10 — 10 µ F, Tantalum Capacitor R1 — 1.0 kΩ Res. RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube, 56–590–65/3B TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL2 — Microstrip 0.162, x 1.000, TL3 — Microstrip 0.162, x 0.800, TL4 — Microstrip 0.162, x 0.440, TL5 — Microstrip 0.120, x 0.440, TL6 — Microstrip 0.120, x 1.160, TL9, TL10 — Microstrip 0.025, x 4.250, Board Material — 0.0625, Thick Glass Teflon ε r = 2.55 Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. MSC1318.PDF 10-25-99 MRF581/MRF581A RF Low Power PA, LNA, and General Purpose Discrete Selector Guide L ow Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) NF (dB) NF IC (mA) NF VCE GN (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 17 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 Pout (watts) Package SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 Freq (MHz) Device 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 15 11 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 MACRO X MACRO X MACRO T MACRO T TO-39 TO-39 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 NPN 1000 NPN 1000 NPN 1000 NPN 1000 PNP NPN 1.3 1.5 2.5 3 5 10 2 2 6 6 5 10 14 10 8 10 17 8000 8000 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 0.45 1 1 1 2 10 10 12 15 70 70 100 70 35 30 400 400 11 5000 12.5 5000 14 13.5 1400 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 2 3 4 3 2 4 1 2 8 1 5 Macro T MSC1318.PDF 10-25-99 Macro X Power Macro SO-8 MRF581/MRF581A PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 4. 2. 3. MSC1318.PDF 10-25-99