MRF5812GR2

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 15 Unit Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 2.5 Vdc IC Collector Current 200 mA 1.25 10 Watts mW/ ºC Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MRF5812G, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) 15 - - Vdc Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 200 DYNAMIC Symbol COB Ftau Test Conditions Value Unit Min. Typ. Max. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 1.4 2.0 pF Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) - 5.0 - GHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MRF5812G, R1, R2 FUNCTIONAL Symbol NFmin G NF G U max MSG 2 |S21| Value Test Conditions Unit Min. Typ. Max. Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz) - 2.0 3.0 Power Gain @ Nfmin (IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz) 13 15.5 Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 17.8 - dB Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 20 - dB Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 15 - dB dB dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .579 -141 24 107 .024 49 .397 -76 ∠φ 300 .593 -173 8.93 85 .045 66 .233 -103 500 .598 175 5.14 74 .066 69 .248 -110 1000 .592 158 2.64 52 .132 72 .347 -119 2000 .615 115 1.55 20 .310 63 .531 -141 3000 .691 72 1.10 -5 .518 41 .648 -172 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN 512 512 400 400 470 470 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 0.5 0.5 1 1 1.5 1.5 10 13 10 10 11 11 65 7.5 16 150 60 12.5 16 150 45 28 30 400 45 28 30 400 50 12.5 16 400 50 12.5 16 400 MACRO X MRF559 NPN 870 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER MACRO MRF557T NPN 870 1.5 6.5 9.5 8 8 8 70 65 55 55 55 7.5 12.5 12.5 12.5 12.5 16 16 16 16 16 150 150 200 400 400 TO-39 2N5109 NPN 200 TO-39 MRF5943C NPN 200 3.4 30 15 MRF5943, R1, R2 NPN 200 3.4 30 15 15 SO-8 3 10 15 12 1200 Ccb(pF) BVCEO IC max (mA) Ftau (MHz) Gu Max (dB) NF (dB) NF IC (mA) NF VCE GNF (dB) Type Freq (MHz) Device Package IC max (mA) 18 10 11.5 11.5 11.5 7.8 20 BVCEO 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 GPE VCC NPN NPN NPN NPN NPN NPN NPN Efficiency (%) GPE (dB) MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 GPE Freq (MHz) (MHz) Pout (watts) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 Type Device Package MRF5812G, R1, R2 3.5 11.4 1000 20 400 30 400 1300 30 400 TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50 TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-72 MRF904 NPN 450 1.5 11 4000 1 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 MACRO T BFR91 NPN 500 1.9 2 5 16.5 5000 1 12 35 BFR96 NPN 500 2 10 10 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200 2 50 10 14 15 200 15 MACRO T SO-8 MACRO X MRF581A NPN 500 5 6 11 14.5 15 500 2.6 5000 30 15 100 Macro BFR90 NPN 500 2.4 2 10 18 5000 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 TO-39 MRF586 NPN 500 90 15 11 14.5 4500 MACRO X MRF951 NPN 1000 1.3 5 6 14 MACRO X MRF571 NPN 1000 1.5 10 6 10 MACRO T BFR91 NPN 1000 2.5 2 5 8 MACRO T BFR90 NPN 1000 2 10 10 TO-39 TO-39 MRF545 MRF544 3 3 PNP NPN 1 15 15 30 16 200 2.2 17 200 17 8000 0.45 10 100 8000 1 10 70 11 5000 1 12 35 12.5 5000 1 15 30 14 1400 13.5 1500 2 70 400 70 400 RF (LNA / General Purpose) Selection Guide RF (Low Power PA / General Purpose) Selection Guide 1 1 8 1 2 4 2 2 4 5 4 3 3 3 Macro T Macro X Power Macro Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MRF5812G, R1, R2 PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 8. 5. 1. 4. 5. EMITTER 6. BASE 7. BASE 8. EMITTER Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005