MRF904

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 • High FT - 4 GHz (typ) @ IC = 15 mAdc 1 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 15 Unit Vdc VCBO VEBO Collector-Base Voltage 25 Vdc Emitter-Base Voltage 3.0 Vdc IC Collector Current 30 mA Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ ºC TJMAX Junction Temperature 200 °C TSTORAGE Storage Temperature -65 to +200 °C Thermal Data PD Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF904 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 15 - - Vdc Collector-Base Breakdown Voltage (IC= .1 mAdc, IE=0) 25 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.0 - - - - 50 nA 30 - 200 - Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Vdc (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 5 Vdc) DYNAMIC Symbol fT CCB NF Test Conditions Value Unit Min. Typ. Max. Current-Gain - Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) - 4.0 - GHz Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - - 1.5 pF Noise Figure (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) - 1.5 - dB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF904 Functional Symbol Value Test Conditions Unit Min. Typ. Max. Maximum Unilateral Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) - 11 7 - dB 2 |21| Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) 9.5 - 10.5 6.5 - dB MAG Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) - 11 7 - dB GU max S (1) Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .66 -37 10.5 131 .040 71 .781 -23 200 .41 -52 7.03 111 .065 71 .597 -27 300 .31 -54 5.33 98 .093 70 .551 -26 400 .26 -59 4.00 90 .111 69 .517 -30 500 .20 -61 3.38 87 .136 71 .467 -30 600 .18 -59 3.00 81 .162 68 .455 -32 700 .16 -60 2.69 75 .186 66 .438 -36 800 .16 -66 2.30 70 .200 63 .437 -42 900 .15 -74 2.16 71 .215 65 .409 -47 1000 .15 -76 2.16 63 .243 62 .413 -48 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ MRF904 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.