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MRF914

MRF914

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MRF914 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation

  • 数据手册
  • 价格&库存
MRF914 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT - 4.5 GHz (typ) @ IC = 20 mAdc 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case • TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 3.0 40 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.6 mWatts mW/ ºC MSC1325.PDF 10-25-99 MRF914 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 12 20 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) 30 200 - DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Value Typ. 4.5 0.7 Max. Unit GHz pF CCB Functional Symbol Test Conditions Min. MAG S 2 Value Typ. 12 11 2.5 15 Max. Unit dB dB dB dB Maximum Available Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Insertion Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Noise Figure (IC = 5.0 mAdc, VCE = 10 Vdc, f = 500 MHz) Maximum Available Power Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) 10 - |21| NF Gmax MSC1325.PDF 10-25-99 MRF914 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 20 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .45 .32 .26 .24 .22 .21 .19 .18 .18 .18 ∠φ -36 -38 -36 -36 -39 -40 -44 -48 -58 -65 |S21| 15.6 8.7 6.3 4.6 3.8 3.4 3.0 2.5 2.4 2.4 ∠φ 115 101 91 86 84 78 72 68 69 62 |S12| .03 .05 .08 .1 .12 .15 .17 .19 .20 .23 ∠φ 75 78 76 74 75 71 68 65 67 63 |S22| .67 .55 .54 .52 .48 .48 .47 .46 .44 .45 ∠φ -20 -19 -17 -22 -23 -26 -29 -35 -40 -42 MSC1325.PDF 10-25-99 MRF914 MSC1325.PDF 10-25-99
MRF914 价格&库存

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