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MRF951

MRF951

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MRF951 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
MRF951 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure – 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package • Macro X DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC .475 Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC Watts Tstg TJmax MSC1326.PDF 10-25-99 MRF951 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO ICBO IEBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 0.1 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 10 Vdc, VBE = 0 Vdc) Collector Cutoff Current (VCE = 1.0 Vdc, VBE = 0 Vdc) 10 20 Value Typ. Max. 0.1 0.1 Unit Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 6.0 Vdc) 50 200 - DYNAMIC Symbol CCB Ftau Test Conditions Min. Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 30 mAdc, VCE = 6 Vdc, f = 1.0 GHz) Value Typ. .45 8.0 Max. 1.0 Unit pF GHz MSC1326.PDF 10-25-99 MRF951 FUNCTIONAL Symbol Test Conditions Min. NFmin Minimum Noise Figure (IC = 5 mAdc, VCE = 6 Vdc, f = 1 GHz) Power Gain @ NFmin (IC = 5.0 mAdc, VCE = 6 Vdc, f = 1 GHz) Maximum Unilateral Gain (1) IC = 30 mAdc, VCE = 8 Vdc, f = 1 GHz Insertion Gain IC = 30 mAdc, VCE = 6 Vdc, f = 1 GHz 12 Value Typ. 1.3 14 17 14.5 Max. Unit dB dB dB dB G G NF U max 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 30 mA f S11 (MHz) 100 500 1000 1500 2000 2500 3000 3500 4000 |S11| .45 .46 .47 .48 .50 .51 .53 .55 .57 ∠φ -95 -170 169 154 142 132 119 109 99 S21 |S21| 36.80 10.20 5.30 3.60 2.80 2.30 1.90 1.60 1.50 ∠φ 132 89 72 58 45 36 23 12 2.0 S12 |S12| .02 .04 .08 .11 .15 .18 .22 .25 .29 ∠φ 64 65 66 63 58 54 47 41 35 S22 |S22| .68 .27 .22 .22 .23 .25 .28 .30 .33 ∠φ -38 -55 -62 -73 -86 -97 -113 -125 -137 MSC1326.PDF 10-25-99 MRF951 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide L ow Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) NF (dB) NF IC (mA) NF VCE GN (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 0.45 1 1 1 17 10 10 12 15 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 100 70 35 30 Pout (watts) Package SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 1000 1000 1000 1000 Freq (MHz) Device 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 6 6 5 10 15 11 14 10 8 10 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 17 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 MACRO X MACRO X MACRO T MACRO T M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 11 12.5 5000 5000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 13.5 1400 1500 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 2 70 70 400 400 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 2 3 4 3 2 4 1 2 8 1 5 Macro T Macro X Power Macro SO-8 MSC1326.PDF 10-25-99 MRF951 PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 4. 2. 3. MSC1326.PDF 10-25-99
MRF951
### 物料型号 - 型号:MRF951

### 器件简介 - 描述:MRF951是一款专为高增益、低噪声小信号放大器设计的晶体管。它具有全植入基极和发射极结构,提供高增益和低噪声系数。

### 引脚分配 - 引脚1:Collector(集电极) - 引脚2:Emitter(发射极) - 引脚3:Base(基极) - 引脚4:Emitter(发射极)

### 参数特性 - 最大额定值: - VCEO(集电极-发射极电压):10Vdc - VCBO(集电极-基极电压):20Vdc - VEBO(发射极-基极电压):1.5Vdc - Ic(集电极电流):100mA - 热数据: - P D(总器件耗散@TC=75°C):0.475Watts - Tstg(存储结温范围):-65至+150°C - TJmax(最大结温):150°C

### 功能详解 - 电气规格: - BVCEO(集电极-发射极击穿电压):10Vdc - BVCBO(集电极-基极击穿电压):20Vdc - ICBO(集电极截止电流):0.1uA - IEBO(发射极截止电流):0.1uA - HFE(直流电流增益):50至200 - CCB(集电极-基极电容):0.45至1.0pF - Ftau(电流增益带宽积):8.0GHz - 动态参数: - NFmin(最小噪声系数):1.3dB - G NF(噪声系数下的功率增益):14dB - Gu max(最大单边增益):17dB - IS2112(插入增益):12至14.5dB

### 应用信息 - 应用:MRF951适用于高增益、低噪声的小信号放大器。

### 封装信息 - 封装类型:Macro X - 封装细节:文档中提供了Macro X封装的详细尺寸和图示。
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