MS1202

MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM ground station applications. Gold metalization and emitter ballast resistors provide long term product ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO PDISS TJ IC TSTG Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Dissipation Junction Temperature Device Current Storage Temperature Value 65 35 4.0 15 200 1.0 -65 to +200 Unit V V V W °C A ºC Thermal Data RTH(J-C) Thermal Resistance Junction-case 11.7 °C/W Rev A January 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1202 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IE = 5 mA VCB = 30 V VCE = 5 V Test Conditions VBE = 0 mA IB =0 IC = 0 mA IE = 0 mA IC = 100 mA Min. 65 35 4 --5 Value Typ. ----------- Max. ------1.0 150 Unit V V V mA --- DYNAMIC Symbol POUT GP ηc Cob f =175 MHz f =175 MHz f =175 MHz f =1 MHz Test Conditions VCE =28V VCE =28V VCE =28V VCE =30V Min. 7.0 8.4 60 --- Value Typ. ----- Max. ----- Unit W dB % --- 15 pF Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1202 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.