MS1409

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS )HDWXUHV • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector '(6&5,37,21: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. TO-39 $%62/87( 0$;,080 5$7,1*6 l7&$6( 25°&J Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature Storage Temperature Value Unit 65 40 4.0 7.0 1.0 200 -65 to 200 V V V W A ºC ºC 25 °C/W 7KHUPDO 'DWD RTH(J-CASE) Thermal Resistance Junction-case Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1409 (/(&75,&$/ 63(&,),&$7,216 l7FDVH 25°&J 67$7,& Symbol BVebo BVcbo BVceo Iceo HFE Test Conditions IE = 0.10 mA IC = 0.3 mA IC = 3 mA VCE = 30 V VCE = 5 V IC = 0 mA IE = 0 mA IS = 0 mA IC = 100 mA Min. Value Typ. Max. 4.0 65 40 --20 ----------- ------0.1 200 Min. Value Typ. Max. Unit V V V mA B '