MS1642P

MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS IC(max) TSTG VCBO VCEO VEBO Parameter Power Dissipation* Device Current* Storage Temperature Collector – Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Value 27 1.5 -65 to +150 60 33 4.0 Unit W A ºC V V V Thermal Data RTH(J-C) Thermal Resistance Junction-case 6.4 °C/W *Applies only to rated RF amplifier operation Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1642P ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Bvceo Bvces Bvcbo Bvebo Icbo HFE IC = 20 mA IC= 20 mA IC = 20 mA IE= 2.0 mA VCB = 30 V VCE = 5 V Test Conditions IE = 0 mA IC = 0 mA IE = 0 mA IC = 0 mA IC = 500 mA Min. 33 60 60 4.0 --20 Value Typ. ------------- Max. --------1.0 100 Unit V V V V mA --- DYNAMIC Symbol PIN GP ηC COB f =400MHz f =400MHz f =400MHz f =1 MHz Test Conditions POUT = 10W Pout = 10W Pout = 10W VCB =28V VCC = 28V VCC =28V VCC =28V Min. --12 50 --- Value Typ. --------- Max. 0.65 ----12 Unit W dB % pF Rev B January 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1642P PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.