MS2205

MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS F e a t ur e s • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL (M220) Epoxy Sealed DESCRIPTION: The MS2205 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS VCE TJ IC TSTG Power Dissipation Collector-Emitter Bias Voltage Junction Temperature Device Current Storage Temperature Parameter 7.5 37 200 1.0 -65 to +200 Value Unit W V A ºC ºC Th e r m a l D a t a RTH(J-C) Revision 1 Junction-case Thermal Resistance* 35 °C/W Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MS2205 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) ST A T I C Symbol BVCBO BVCEO BVEBO ICES HFE I C = 1 mA I C = 5 mA IE = 1.0 mA V CE = 3 5 V V CE = 5 V Test Conditions I E = 0 mA I B = 0m A I C = 0 mA IC = 100 mA Min. 45 20 3.5 --20 V a lu e Typ. ----------- Max. ------1.0 120 Unit V V V mA - -- DYNAMIC Symbol POUT GP Conditions Test Conditions f =1025 - 1150 M Hz f =1025 - 1150 M Hz PIN = 400mW PIN = 400mW VCE =35V VCE =35V Min. 4 10 Value Typ. - -- -- Max. -- -- - Unit W dB Pulse Width = 10 µs Duty Cycle = 1% Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MS2205 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct.