MS2473

MS2473 600 Watts, 50 Volts, Pulsed Avionics 1090 MHz GENERAL DESCRIPTION The MS2473 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance packaging reduces the junction temperature and extends device lifetime. CASE OUTLINE M112 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVcbo Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 2300 Watts 65 Volts 3.5 Volts 46 Amps - 65 to + 150oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc RLIN BVebo BVcbo Ices hFE CHARACTERISTICS Power Out Power Input = 150W Power Gain Collector Efficiency Input Return Loss TEST CONDITIONS F = 1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz MIN 600 150 6.0 35 10 TYP MAX UNITS Watts Watts dB % dB Θjc2 Emitter to Base Breakdown Collector to Base Breakdown Collector to Emitter Leakage DC - Current Gain Thermal Resistance Ie = 10 mA Ic = 25 mA Vce = 50V Vce = 5V, Ic = 1A 3.5 65 5 0.06 35 200 Volts Volts mA C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Initial , January 2007 Microsemi – PPG reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi – PPG reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.