MS3022

MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for microwave communication links in the 1.0 to 2.0 GHz frequency ranges. CASE OUTLINE .250 2LFL M210 (Common Base) Features • GOLD METALLIZATIOM • POUT = 1.0 W MINIMUM • GP = 7.0 dB • COMMON BASE ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) 7 Voltage and Current Collector to Base Voltage (BVCES) 45 Emitter to Base Voltage (BVEBO) 3.5 Collector Current (IC) 0.2 Temperatures Storage Temperature -65 to +150 Operating Junction Temperature +200 W (At rated pulse condition) V V A °C °C PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL BVCEO BVCBO BVEBO ICBO HFE θjc1 NOTES: CHARACTERISTICS Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Base Leakage DC – Current Gain Thermal Resistance TEST CONDITIONS IC = 5 mA, RBE = 50 IC = 1 mA, IB = 0 mA IE = 1 mA, IC = 0 mA VCB = 28.0 V IC = 0.1A, VCE = 5V MIN 45 45 3.5 15 TYP MAX UNITS V V V mA °C/W 0.5 120 25 1. At rated output power, pulse conditions and MSC fixture Rev. A : Oct. 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 FUNCTIONAL CHARACTERISTICS @ 25°C SYMBOL POUT PIN GP ηC COB CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Collector Base Capacitance TEST CONDITIONS F = 2.0GHz VCB = 28V Pin = 0.2W CW F = 1 MHz, VCB = 28V MIN 1.0 0.2 7.0 35 3.2 TYP MAX UNITS W W dB % pF Typical Performance (2.0 GHz) Input/Output 1.60 60.0% Efficie ncy Ouput Power (W) 1.40 1.20 50.0% 40.0% 1.00 0.80 0.60 20.0% Eff. 0.05 0.10 0.15 0.20 0.25 30.0% 0.40 0.20 0.00 0.00 10.0% 0.0% 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 Input Powe r (W) Output Powe r(W) Typical Performance (1.0 GHz) I nput/Output 2.00 1.80 70.0% Efficie ncy Ouput Power (W) 1.60 1.40 1.20 1.00 0.80 0.60 0.40 60.0% 50.0% Eff. 0.05 0.10 0.15 0.20 0.25 40.0% 30.0% 20.0% 0.20 0.00 0.00 10.0% 0.00 0.50 1.00 1.50 2.00 Input Powe r (W) Output Powe r(W) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 MS3022 Test Circuit Layout (@ 2GHz) MS3022 Test Circuit Component Designations and Values Part C1, C2 C4 M1 M3 M5 M7 M9 M11 Description 39pF Chip Capacitor (ATC 200A) 47uF 63V Electrolytic Capacitor 100 x 675 mils (W x L) 200 x 475 mils (W x L) 445 x 300 mils (W x L) 445 x 350 mils (W x L) 86 x 460 mils (W x L) 25 x 1040 mils (W x L) Part C3 L1 M2 M4 M6 M8 M10 PCB Description 100pF Chip Capacitor (ATC 200B) Length: 0.32”, AWG20 86 x 850 mils (W x L) 240 x 275 mils (W x L) 645 x 350 mils (W x L) 86 x 225 mils (W x L) 25 x 1055 mils (W x L) Arlon, εr=2.55, 31mils, 1oz Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 Typical Impedance Values Input Matching Network DUT Output Matching Network ZS ZL Frequency 1.0 GHz 1.5 GHz 1.7 GHz 2.0 GHz ZS ( ) 8.3 – j7.0 12.0 – j16.0 15.0 – j14.0 21.5 – j22.5 ZL ( ) 18.0 + j38.0 9.6 + j30.0 7.0 + j22.0 5.0 + j12.0 * VCB = 28V, PIN = 0.2W POUT > 1W * CW Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.