MS3023

MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term reliability and superior ruggedness. FEATURES • • • • • • • GOLD METALLIZATIOM POUT = 3 W MINIMUN 2.0 GHz GP = 7.8 dB INFINITE VSWR CAPABLE @ RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION ABSOLUTE MAXIMUM RATINGS @ 25°C SYMBOL PDISS1 IC1 VCC TJ TSTG θjc1 PARAMETER Power Dissipation Device Current Collector Supply Voltage Junction Temperature (Pulsed RF Operation) Storage Temperature Junction-Case Thermal Resistance VALUE 12.5 550 35 +200 -65 to +150 14.0 UNITS W mA V °C °C °C/W NOTES: 1. At rated output power, pulse conditions and MSC fixture Rev. A: Apr. 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3023 ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL BVCER BVCBO BVEBO ICES HFE CHARACTERISTICS Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Emitter Leakage DC – Current Gain TEST CONDITIONS IC = 5 mA, RBE = 10 IC = 1 mA, IE = 0 mA IE = 1 mA, IC = 0 mA VBE = 0 V, VCB = 28V IC = 200 mA, VCE = 5 V MIN 45 45 3.5 15 TYP MAX 1.0 120 UNITS V V V mA - FUNCTIONAL CHARACTERISTICS @ 25°C SYMBOL POUT GP ηC COB CHARACTERISTICS Power Out Power Gain Collector Efficiency Output Capacitance TEST CONDITIONS F = 1.0 / 2.0 GHz VCB = 28V Pin = 0.5W F = 1MHz VCB = 28V MIN 3.0 7.8 35 TYP MAX 6.5 UNITS W dB % pF Typical Impedance Values Input Matching Network DUT Output Matching Network ZS Frequency (GHz) 1.0 1.5 2.0 ZS ( ) 4.4 – j5.5 4.5 – j9.0 4.6 – j12.5 ZL ZL ( ) 9.6 + j16.0 4.3 + j7.0 3.0 + j1.0 * VCC = 28V, PIN = 0.5W, POUT > 3W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3023 Typical Performance (@ 1.0GHz / 2.0GHz) I nput/Output 6.00 14.00 12.00 Gain Ouput Power (W) 5.00 Gain (dB) 10.00 8.00 6.00 4.00 3.00 2.00 1.0 GHz 1.00 4.00 1.0 GHz 2.00 2.0 GHz 0.00 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.00 0.00 1.00 2.00 3.00 4.00 2.0 GHz 5.00 6.00 Input Pow er (W ) Output Pow er (W) Input Return Loss 0.00 Efficiency 80.0% Input Return Loss (dB) 1.0 GHz 70.0% -5.00 2.0 GHz Effi. (% ) 60.0% 50.0% 40.0% -10.00 -15.00 30.0% 20.0% -20.00 1.0 GHz 10.0% -25.00 0.00 2.0 GHz 1.00 2.00 3.00 4.00 5.00 6.00 0.0% 0.00 1.00 2.00 3.00 4.00 5.00 6.00 Output Pow er (W) Output Pow er (W) NOTES: The fixture is not broad-band. The unit is tested with 1.0 GHz fixture and 2.0 GHz fixture. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3023 MS3023 Test Circuit Layout @ 1.0 GHz MS3023 Test Circuit Component Designations and Values @ 1.0 GHz Part C1 C2, C5, C6 C8 M1 M3 M5 Description 1.0pF Chip Capacitor (ATC 600F) 4.7pF Chip Capacitor (ATC 600F) 47uF 63V Electrolytic Capacitor 66 x 1120 mils (W x L) 300 x 450 mils (W x L) 30 x 1706 mils (W x L) Part C4 C3, C7, C8 PCB M2 M4 M6 Description 2.4pF Chip Capacitor (ATC 600F) 100pF Chip Capacitor (ATC 600F) RF-35, εr=3.55, 30mils, 1oz 400 x 480 mils (W x L) 66 x 1090 mils (W x L) 50 x 1740 mils (W x L) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3023 MS3023 Test Circuit Layout @ 2.0 GHz MS3023 Test Circuit Component Designations and Values @ 2.0 GHz Part C1 C3 C5, C8 C7 C10 M1 M3 M5 M7 M9 M11 Description 0.2pF Chip Capacitor (ATC 200B) 1.5pF Chip Capacitor (ATC 200B) 39pF Chip Capacitor (ATC 200A) 0.3pF Chip Capacitor (ATC 200B) 47uF 63V Electrolytic Capacitor 86 x 550 mils (W x L) 86 x 150 mils (W x L) 86 x 625 mils (W x L) 540 x 1015 mils (W x L) 86 x 445 mils (W x L) 25 x 1040 mils (W x L) Part C2 C4 C6 C9 PCB M2 M4 M6 M8 M10 Description 1.7pF Chip Capacitor (ATC 200B) 2.2pF Chip Capacitor (ATC 200B) 0.4pF Chip Capacitor (ATC 200B) 100pF Chip Capacitor (ATC 200B) Arlon, εr=2.55, 31mils, 1oz 180 x 135 mils (W x L) 180 x 150 mils (W x L) 650 x 390 mils (W x L) 86 x 500 mils (W x L) 25 x 1055 mils (W x L) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3023 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.