MS652

MS652

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MS652 - 5.0 Watts, 12.5 Volts, Class C UHF Applications - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
MS652 数据手册
MS652/MS652S 5.0 Watts, 12.5 Volts, Class C UHF Applications GENERAL DESCRIPTION The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands severe mismatch under normal operating conditions. Maximum Power Dissipation @ 25°C BVCBO BVCEO BVEBO IC Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current ABSOLUTE MAXIMUM RATINGS 25 Watts 36 Volts 16 Volts 4.0 Volts 2.0 Amps -65 to +150 °C +200 °C .280 4L STUD(M122), Epoxy sealed MS652 Storage Temperature Operating Junction Temperature .280 4LSL (M123), Epoxy sealed MS652S FUNCTIONAL CHARACTERISTICS @ 25°C SYMBOL POUT PIN GP η CHARACTERISTICS Power Out Power Input Power Gain Efficiency TEST CONDITIONS F = 512 MHz VCE = 12.5V POUT = 5W MIN 5.0 10.0 60 TYP MAX 0.5 UNITS W W dB % ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL BVCES BVCEO BVCBO BVEBO ICES hFE COB θjc1 CHARACTERISTICS Collector to Emitter Breakdown Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Emitter Leakage DC – Current Gain Output Capacitance Junction-Case Thermal Resistance TEST CONDITIONS IC = 25 mA, VBE = 0 IC = 50 mA, IB = 0 IC = 25 mA, IE = 0 IE = 5 mA, IC = 0 VCE = 15 V, VBE = 0 IC = 200 mA, VCE = 5 V F = 1MHz, VCB = 15V MIN 36 16 36 4.0 10 TYP MAX 1.0 150 15 7 UNITS V V V V mA pF °C/W NOTES: 1. At rated output power with MSC fixture. Rev. A: May. 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S Typical Impedance Values Input Matching Network DUT Output Matching Network ZS ZL Frequency (MHz) 400 440 470 512 * VCC = 12.5V, POUT = 5W ZS ( ) 1.2 – j0.6 1.2 – j0.9 1.2 – j1.2 1.2 – j1.5 ZL ( ) 6.5 + j6.5 7.2 + j6.0 7.7 + j5.3 8.3 + j4.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S 440 - 512 MHz Broadband Test Circuit Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
MS652
物料型号: - MS652/MS652S

器件简介: - MS652/MS652S是一款共发射极和12.5V Class C外延硅NPN平面晶体管,主要设计用于UHF通信。在正常工作条件下,它能承受严重的不匹配。

引脚分配: - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector)

参数特性: - 最大耗散功率:25W @ 25°C - 集电极到基极电压(BVCBO):36V - 集电极到发射极电压(BVCEO):16V - 发射极到基极电压(BVEBO):4.0V - 集电极电流(Ic):2.0A - 工作温度范围:-65°C 至 +150°C - 存储温度:+200°C

功能详解: - 输出功率(POUT):5.0W @ 512 MHz,VcE = 12.5V - 功率增益(Gp):10.0 dB - 效率(n):60% @ Pout = 5W

应用信息: - MS652/MS652S适用于UHF通信领域,特别是在需要承受严重不匹配的场合。

封装信息: - 提供了两种封装风格:MA和M123,具体尺寸参数在文档中有详细描述。
MS652 价格&库存

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