MS8251-P2920

MS8251-P2920

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MS8251-P2920 - GaAs Schottky Diodes Flip Chip Anti Parallel Low C - Microsemi Corporation

  • 数据手册
  • 价格&库存
MS8251-P2920 数据手册
GaAs Schottky Diodes TM ® Flip Chip Anti Parallel Low CT MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● ● ● ● Capacitance (45 fF Typ.) Low Series Resistance (7  Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads Description The MS8251-P2920 is a GaAs flip chip anti-parallel pair Schottky device designed for use as harmonic mixer elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include, transceivers, digital radios and automotive radar detectors. These flip chip devices incorporate Microsemi’s expertise in GaAs material processing, silicon nitride protective coatings and high temperature metallization. They have large, 5 x 8 mil, bond pads for ease of insertion. The MS8251-P2920 is priced for high volume commercial and industrial applications. Specifications @ 25°C (Per Junction) ● ● ● ● ● VF (1 mA): 600–800 mV VF (1 mA): 10 mV Max. RS (10 mA): 9  Max. IR (3 V): 10 A Max. CT (0 V): 60 fF Max. Maximum Ratings Insertion Temperature Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 250°C for 10 Seconds +20 dBm @ 25°C 15 mA @ 25°C 3V -55°C to +125°C -65°C to +150°C Copyright  2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Schottky Diodes TM ® Flip Chip Anti Parallel Low CT MS8251 – P2920 P2613 DIM A B C D C J D B E F G H J INCHES MIN. 0.0255 0.0125 0.0046 0.0075 0.0170 0.0050 0.0045 0.0016 0.0023 MAX. 0.0265 0.0135 0.0056 0.0085 0.0180 0.0060 0.0055 0.0020 0.0027 MIN. 0.6480 0.3180 0.1170 0.1910 0.4320 0.1270 0.1140 0.0406 0.0584 MM MAX. 0.6730 0.3430 0.1420 0.2160 0.4570 0.1520 0.1400 0.0508 0.0686 A G E F H Spice Model Parameters (Per Junction) IS A 3.2 x10-13 RS  7 1 N TT Sec 0 CJ0 pF 0.025 CP pF 0.02 0.50 M EG eV 1.42 VJ V 0.85 BV V 4 IBV A 1 x 10-5 IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions.. 1 The MS8251 is supplied with a RoHS complaint Gold finish . Copyright  2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2
MS8251-P2920 价格&库存

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