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MSD100

MSD100

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    MSD100 - Glass Passivated Three Phase Rectifier Bridge - Microsemi Corporation

  • 数据手册
  • 价格&库存
MSD100 数据手册
MSD100 Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 100 Amp Applications Three phase rectifiers for power supplies Rectifiers for DC motor field supplies Battery charger rectifiers Input rectifiers for variable frequency drives Circuit + MSD ~ ~ ~ - Features Three phase bridge rectifier Blocking voltage: 800 to 1800V Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Glass passivated chip Module Type TYPE MSD100 – 08 MSD100 – 12 MSD100 – 16 MSD100 – 18 VRRM 800V 1200V 1600V 1800V VRSM 900V 1300V 1700V 1900V Maximum Ratings Symbol ID IFSM i2 t Visol Tvj Tstg Mt Ms Weight Conditions Tc=100℃ t=10mS Tvj =45℃ t=10mS Tvj =45℃ a.c.50Hz;r.m.s.;1min Values 100 920 4200 3000 -40 to 150 -40 to 125 Units A A A2 s V ℃ ℃ Nm Nm g To terminals(M6) To heatsink(M6) Module 5±15% 5±15% 230 Thermal Characteristics Symbol Conditions Rth(j-c) Rth(c-s) Per diode Module Values 0.9 0.03 Units ℃/W ℃/W Electrical Characteristics Symbol Conditions VFM IRD T=25℃ IFM =300A Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM Values 1.9 ≤ 0.3 ≤5 Units V mA mA MSD100-Rev 1 Dec, 2009 www.microsemi.com 1/3 MSD100 Performance Curves 300 A 250 W Typ. 150 125℃ 25℃ 125 IF 0 0 VF 0.5 1.0 1.5 2.0 V Pvtot 0 0 ID 50 100 A Fig1. Forward Characteristics 1.0 ℃/ W Zth(j-C) 1000 0.5 1500 A Fig2. Power dissipation 50Hz 500 0 0.001 0.01 0.1 1 10 100 S 0 1 10 cycles 100 Fig3. Transient thermal impedance 200 A 160 Fig4. Max Non-Repetitive Forward Surge Current 120 80 40 ID 0 0 Tc 50 100 150°C Fig5.Forward Current Derating Curve MSD100-Rev 1 Dec, 2009 www.microsemi.com 2/3 MSD100 Package Outline Information CASE-M3 Dimensions in mm MSD100-Rev 1 Dec, 2009 www.microsemi.com 3/3
MSD100 价格&库存

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