MSD52-16

Power Products Microsemi Power Portfolio 2018 Power Semiconductors Power Modules RF Power MOSFETs Contents High-Voltage SMPS Transistors Insulated Gate Bipolar Transistors (IGBTs)........................................................................................................ 3 Silicon Carbide (SiC) MOSFETs........................................................................................................................ 7 Power MOS 8™ MOSFETs/FREDFETs.............................................................................................................. 8 Ultra-Fast, Low Gate Charge MOSFETs........................................................................................................ 10 Super Junction MOSFETs.............................................................................................................................. 11 Linear MOSFETs............................................................................................................................................ 11 Diodes SiC Schottky Barrier Diodes.......................................................................................................................... 12 Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes................................................................. 12 High-Voltage RF MOSFETs................................................................................................................................... 15 High-Frequency RF MOSFETs.............................................................................................................................. 15 Drivers and Driver-RF MOSFET Hybrids............................................................................................................... 16 Reference Design Kits.......................................................................................................................................... 16 Power Modules Power Modules Contents.............................................................................................................................. 17 Standard Electrical Configurations................................................................................................................. 18 Packaging..................................................................................................................................................... 19 Custom Power Modules................................................................................................................................ 20 Rugged Custom Power Modules................................................................................................................... 21 Power Module Part Numbering System......................................................................................................... 22 IGBT Power Modules.................................................................................................................................... 23 Intelligent Power Modules.............................................................................................................................. 26 MOSFET Power Modules.............................................................................................................................. 27 Renewable Energy Power Modules............................................................................................................... 31 Power Modules with SiC Schottky Diodes..................................................................................................... 33 SiC MOSFET Power Modules........................................................................................................................ 35 Diode Power Modules................................................................................................................................... 36 Package Outlines................................................................................................................................................. 37 Power Module Outlines........................................................................................................................................ 38 ASPM®, Power MOS 7®, and T MAX® are registered trademarks of Microsemi Corporation. 2 Insulated Gate Bipolar Transistors (IGBTs) IGBTs from Microsemi IGBT products from Microsemi provide high-quality solutions for a wide range of high-voltage, high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density switch mode power supply (SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: non-punch-through (NPT), punch-through (PT), and field stop. IGBT Switching Frequency Ranges (kHz, Hard Switched) 0 20 40 60 80 100 120 140 160 Field Stop 600 V Power MOS 8™ PT 650 V 900 V Power MOS 8™ NPT (NEW!) Power MOS 8™ PT Field Stop 1200 V Power MOS 7™ PT Power MOS 8™ NPT Note: Frequency ranges shown are typical for a 50 A IGBT. Refer to product datasheet maximum frequency versus current graph for more information. Standard Series Voltage Ratings (V) Technology Easy to Parallel Short Circuit Safe Operating Area (SOA) Parameter MOS 7™ 1200 PT Ultra-low gate charge MOS 8™ 600, 650, 900, 1200 PT, NPT Highest efficiency 600, 1200 Field Stop Field Stop Trench Gate • • Lowest conduction loss Product Options All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. Package options include TO-220, TO-247, T-MAX®, TO-264, and SOT-227. Customized products are available; contact the factory for details. 3 IGBTs—Punch-Thru V(BR)CES (V) POWER MOS 7™ VCE(ON) (V) Typ 25 °C IC2 (A) Maximum IC (A) 100 °C at Frequency Single • Ultra-low gate charge • Combi with high-speed DQ diode 1200 POWER MOS 8 3.3 33 19 12 APT25GP120BG TO-247 3.3 46 24 15 APT35GP120BG TO-247 3.3 54 29 18 APT45GP120BG TO-247 3.3 34 28 18 APT45GP120J ISOTOP 3.3 91 42 24 APT75GP120B2G T-MAX® 3.3 57 40 23 APT75GP120J ISOTOP • Fast switching • Highest efficiency • Combi with high-speed DQ diode 600 TO-247[B] 20 kHz 40 kHz 3.3 33 19 12 APT25GP120BDQ1G TO-247 3.3 46 24 15 APT35GP120B2DQ2G T-MAX 3.3 54 29 18 APT45GP120B2DQ2G T-MAX® 3.3 34 28 18 APT45GP120JDQ2 ISOTOP 3.3 57 40 23 APT75GP120JDQ3 ISOTOP Single ™ Package Style 20 kHz 40 kHz Combi (IGBT & "DQ" FRED) 1200 Part Number D3PAK[S] ® 50 kHz 80 kHz 2 36 21 17 APT36GA60B TO-247 or D3PAK 2 44 26 20 APT44GA60B TO-247 or D3PAK 2 54 30 23 APT54GA60B TO-247 or D3PAK 2 68 35 27 APT68GA60B TO-247 or D3PAK 2 80 40 31 APT80GA60B TO-247 or D3PAK 2 102 51 39 APT102GA60B2 T-MAX® or TO-264 T-MAX®[B2] 25 kHz 50 kHz 900 2.5 35 17 10 APT35GA90B TO-247 or D3PAK 2.5 43 21 13 APT43GA90B TO-247 or D3PAK 2.5 64 29 19 APT64GA90B TO-247 or D3PAK 2.5 80 34 23 APT80GA90B TO-247 or D3PAK Combi (IGBT & "DQ" FRED) 600 TO-264[L] 50 kHz 80 kHz 2 36 21 17 APT36GA60BD15 TO-247 or D3PAK 2 44 26 20 APT44GA60BD30 TO-247 or D3PAK 2 54 30 23 APT54GA60BD30 TO-247 or D3PAK 2 60 48 36 APT60GA60JD60 ISOTOP® 2 68 35 27 APT68GA60B2D40 T-MAX® or TO-264 2 80 40 31 APT80GA60LD40 TO-264 25 kHz 50 kHz 900 2.5 27 14 8 APT27GA90BD15 TO-247 or D3PAK 2.5 35 17 10 APT35GA90BD15 TO-247 or D3PAK 2.5 43 21 13 APT43GA90BD30 TO-247 or D3PAK 2.5 46 33 21 APT46GA90JD40 ISOTOP® 2.5 64 29 19 APT64GA90B2D30 T-MAX® or TO-264 2.5 80 34 23 APT80GA90LD40 TO-264 ISOTOP®[J] SOT-227 C G E Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Current at frequency test conditions: Tj = 125 °C, Tc = 100 °C except Isotop® where Tc = 80 °C, Vcc = 67% rated voltage hard switch. Datasheets available on www.microsemi.com 4 All products RoHS-compliant IGBTs—Non-Punch-Thru V(BR)CES (V) POWER MOS 8™ VCE(ON) (V) IC2 (A) Typ 25 °C 100 °C Single Part Number Package Style APT45GR65B TO-247 150 kHz 200 kHz 1.9 • High-speed switching Maximum IC (A) at Frequency 45 31 25 100 kHz 150 kHz • Low switching losses • Easy to parallel 650 1.9 1.9 1200 70 95 39 50 kHz 100 kHz 69 41 50 kHz 80 kHz APT70GR65B TO-247 APT95GR65B2 T-MAX® 2.5 25 25 21 APT25GR120B TO-247 2.5 25 25 21 APT25GR120S D3PAK 2.5 40 38 28 APT40GR120B TO-247 2.5 40 38 28 APT40GR120S D3PAK 2.5 50 48 36 APT50GR120B2 T-MAX® 2.5 50 48 36 APT50GR120L TO-264 25 kHz 50 kHz 2.5 70 66 42 APT70GR120B2 T-MAX® 2.5 70 66 42 APT70GR120L TO-264 2.5 70* 42 30 APT70GR120J ISOTOP 2.5 85 72 46 APT85GR120B2 T-MAX® 2.5 85 72 46 APT85GR120L TO-264 2.5 85* 46 31 APT85GR120J ISOTOP® APT45GR65BSCD10 TO-247 (SiC SBD) Combi (IGBT & Diode) D3PAK[S] T-MAX®[B2] ® 150 kHz 200 kHz 1.9 45 31 25 100 kHz 150 kHz 650 1.9 1200 52 TO-247[B] 70 52 39 50 kHz 80 kHz APT70GR65B2SCD30 T-MAX® (SiC SBD) TO-264[L] 2.5 25 25 21 APT25GR120BD15 TO-247 (DQ) 2.5 25 25 21 APT25GR120SD15 D3PAK (DQ) 2.5 25 25 21 APT25GR120BSCD10 TO-247 (SiC SBD) 2.5 25 25 21 APT25GR120SSCD10 D3PAK (SiC SBD) 2.5 40 38 28 APT40GR120B2D30 T-MAX® (DQ) 2.5 40 38 28 25 kHz 50 kHz APT40GR120B2SCD10 T-MAX® (SiC SBD) 2.5 50* 42 32 APT50GR120JD30 ISOTOP (DQ) 2.5 70* 42 30 APT70GR120JD60 ISOTOP® (DQ) 2.5 85* 46 31 APT85GR120JD60 ISOTOP® (DQ) ® ISOTOP®[J] SOT-227 C Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. G E Current at frequency test conditions: Tj = 125 °C, Tc = 100 °C except Isotop® where Tc = 80 °C, Vcc = 67% rated voltage hard switch. Datasheets available on www.microsemi.com All products RoHS-compliant 5 IGBTs—Field Stop V(BR)CES (V) Field Stop VCE(ON) (V) IC2 (A) Typ 25 °C 100 °C Single • Trench technology • Short circuit rated • Lowest conduction loss • Easy paralleling 600 • Combi with high-speed DQ diode Maximum IC (A) at Frequency Part Number Package Style 15 kHz 30 kHz 1.5 24 15 10 APT20GN60BG TO-247 1.5 37 20 14 APT30GN60BG TO-247 1.5 64 30 21 APT50GN60BG TO-247 1.5 93 42 30 APT75GN60BG TO-247 1.5 123 75 47 APT150GN60J ISOTOP® 1.5 135 54 39 APT100GN60B2G T-MAX® 1.5 190 79 57 APT150GN60B2G T-MAX® 1.5 230 103 75 APT200GN60B2G T-MAX 1.5 158 100 66 APT200GN60J ISOTOP® APT25GN120BG TO-247 or D3PAK TO-247[B] D3PAK[S] ® 10 kHz 20 kHz 1200 1.7 33 19 13 1.7 46 24 17 APT35GN120BG TO-247 1.7 66 32 22 APT50GN120B2G T-MAX® 1.7 70 44 27 APT100GN120J ISOTOP® 1.7 99 45 30 APT75GN120B2G T-MAX® or TO-264 1.7 120 58 38 APT100GN120B2G T-MAX® 1.7 99 60 36 APT150GN120J ISOTOP® Combi (IGBT & "DQ" FRED) 600 T-MAX®[B2] 15 kHz 30 kHz 1.5 24 15 10 APT20GN60BDQ1G TO-247 1.5 37 20 14 APT30GN60BDQ2G TO-247 1.5 64 30 21 APT50GN60BDQ2G TO-247 1.5 93 42 30 APT75GN60LDQ3G TO-264 1.5 123 75 47 APT150GN60JDQ4 ISOTOP® 1.5 135 54 39 APT100GN60LDQ4G TO-264v 1.5 190 79 57 APT150GN60LDQ4G TO-264 1.5 158 100 66 APT200GN60JDQ4 ISOTOP® TO-264[L] 10 kHz 20 kHz 1200 1.7 22 14 10 APT15GN120BDQ1G TO-247 or D3PAK 1.7 33 19 13 APT25GN120B2DQ2G T-MAX® 1.7 46 24 17 APT35GN120L2DQ2G 264-MAX™ 1.7 57 36 22 APT75GN120JDQ3 ISOTOP® 1.7 66 32 22 APT50GN120L2DQ2G 264-MAX™ 1.7 70 44 27 APT100GN120JDQ4 ISOTOP® 1.7 99 60 36 APT150GN120JDQ4 ISOTOP® Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. 264-MAX™[L2] ISOTOP®[J] SOT-227 C G E Current at frequency test conditions: Tj = 125 °C, Tc = 100 °C except Isotop® where Tc = 80 °C, Vcc = 67% rated voltage hard switch. Datasheets available on www.microsemi.com 6 All products RoHS-compliant Silicon Carbide (SiC) MOSFETs Silicon Carbide (SiC) MOSFETs Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V) applications. Target markets and applications include: • Smart energy: photovoltaic (PV) inverter, wind turbine • Medical: MRI power supply, X-Ray power supply • Defense and oil drilling: Motor drives, auxiliary power supplies • Commercial aviation: Actuation, air conditioning, power distribution • Industrial: Motor drives, welding, uniterruptible power supply (UPS), SMPS, induction heating • Transportation/automotive: Electric vehicle (EV) battery charger, hybrid electric vehicle (HEV) powertrain, DC–DC converter, energy recovery Part Number MSC090SMA070B MSC090SMA070S MSC060SMA070B MSC060SMA070S MSC035SMA070B MSC035SMA070S MSC015SMA070B MSC015SMA070S MSC280SMA120B MSC280SMA120S MSC140SMA120B MSC140SMA120S MSC080SMA120B MSC080SMA120S MSC080SMA120J MSC040SMA120B MSC040SMA120S MSC040SMA120J MSC025SMA120B MSC025SMA120S MSC025SMA120J MSC750SMA170B MSC750SMA170S MSC045SMA170B MSC045SMA170S Voltage (V) SiC MOSFET and SiC Schottky barrier diode product lines from Microsemi increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower cost cooling. RDS(ON) (Typical) 90 mΩ 60 mΩ 700 35 mΩ 15 mΩ 280 mΩ 140 mΩ 80 mΩ 1200 40 mΩ 25 mΩ 750 mΩ 1700 45 mΩ Package TO-247 D3PAK TO-247 D3PAK TO-247 D3PAK TO-247 D3PAK TO-247 D3PAK TO-247 D3PAK TO-247 D3PAK SOT-227 TO-247 D3PAK SOT-227 TO-247 D3PAK SOT-227 TO-247 D3PAK TO-247 D3PAK TO-247 TO-268 D3PAK SiC MOSFET Features and Benefits Characteristics Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy (ev) Thermal conductivity (W/m.K) Positive temperature coefficient Results Lower on-resistance Faster switching Higher junction temperature Higher power density Self regulation Benefits Higher efficiency Size reduction Improved cooling Higher current capabilities Easy paralleling Microsemi Advantages Versus Competition • Lowest conduction losses at high temperature • Low switching losses • High short circuit withstand rating • Low gate resistance • High avalanche rating: UIS and Repetitive UIS • Patented SiC technology • SiC is the perfect technology to address high-frequency and high-power-density applications • Lower power losses • Easier cooling, downsized system, and higher reliability 7 Power MOS 8™ MOSFETs/FREDFETs BVDSS (V) RDS(ON) Max (Ω) ID (A) MOSFET Part Number 8 APT7M120B 14 APT14M120B 2.40 2.10 1.20 1.10 0.63 7 APT7F120B TO-247 or D3PAK TO-247 24 APT13F120B TO-247 or D3PAK TO-247 APT22F120B2 APT24M120B2 T-MAX® or TO-264 27 APT26F120B2 T-MAX® or TO-264 0.58 18 APT17F120J ISOTOP® 0.53 29 APT28M120B2 T-MAX® or TO-264 0.53 19 APT19M120J ISOTOP® 33 35 APT34M120J 8 APT8M100B 2.00 1.80 1.60 1.40 9 0.88 14 APT14M100B 18 APT18M100B 0.78 0.70 APT32F120J ISOTOP® 7 APT7F100B TO-247 9 APT9F100B TO-247 or D3PAK 14 APT14F100B TO-247 or D3PAK TO-247 TO-247 TO-247 or D3PAK 17 APT17F100B TO-247 or D3PAK TO-247 0.44 30 APT29F100B2 T-MAX® or TO-264 0.44 20 APT19F100J ISOTOP® 0.38 32 APT31M100B2 35 APT34F100B2 T-MAX® or TO-264 0.38 21 APT21M100J 23 APT22F100J ISOTOP® 0.33 37 APT37M100B2 T-MAX® or TO-264 0.33 25 APT25M100J ISOTOP® 0.20 0.18 42 45 APT45M100J 13 APT12M80B 0.90 0.80 0.58 0.53 19 0.39 25 43 APT41M80B2 0.21 ISOTOP® 12 APT11F80B TO-247 or D3PAK 18 APT17F80B TO-247 or D3PAK 23 APT22F80B TO-247 TO-247 or D3PAK TO-247 or D3PAK 41 APT38F80B2 T-MAX® or TO-264 47 APT44F80B2 T-MAX® or TO-264 31 APT29F80J ISOTOP® 49 APT48M80B2 T-MAX® or TO-264 0.19 33 APT32M80J ISOTOP® 0.10 57 60 TO-264[L] TO-247 or D3PAK 0.19 0.11 T-MAX®[B2] ISOTOP® APT24M80B 0.24 0.21 APT41F100J APT18M80B 0.43 D3PAK[S] ISOTOP® APT9M100B 0.98 TO-247[B] T-MAX® or TO-264 0.58 0.29 800 Package Style 23 0.32 1000 FREDFET Part Number 14 0.70 1200 ID (A) APT53F80J APT58M80J ISOTOP® ISOTOP® ISOTOP®[J] SOT-227 (Isolated Base) Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Datasheets available on www.microsemi.com 8 All products RoHS-compliant Power MOS 8™ MOSFETs/FREDFETs (continued) BVDSS (V) 600 500 RDS(ON) Max (Ω) ID (A) FREDFET Part Number Package Style 0.37 19 APT18F60B TO-247 or D3PAK 0.29 24 APT23F60B TO-247 or D3PAK ID (A) MOSFET Part Number 0.19 36 APT34M60B 36 APT34F60B TO-247 0.15 45 APT43M60B2 45 APT43F60B2 T-MAX® or TO-264 0.15 31 APT30M60J 31 APT30F60J ISOTOP® 0.11 60 APT56M60B2 60 APT56F60B2 T-MAX® or TO-264 0.11 42 APT39M60J 42 APT39F60J ISOTOP® 0.09 70 APT66M60B2 70 APT66F60B2 T-MAX® or TO-264 0.09 49 APT47M60J 49 APT47F60J ISOTOP® 0.055 84 APT80M60J 84 APT80F60J ISOTOP® 0.24 24 APT24F50B TO-247 or D3PAK 0.19 30 APT30F50B TO-247 or D3PAK 0.15 37 APT37F50B TO-247 or D3PAK 0.13 43 APT42F50B TO-247 or D3PAK 0.10 56 APT56M50B2 56 APT56F50B2 T-MAX® or TO-264 0.10 38 APT38M50J 38 APT38F50J ISOTOP® 0.075 75 APT75M50B2 75 APT75F50B2 T-MAX® or TO-264 0.075 51 APT51M50J 51 APT51F50J ISOTOP® 0.062 84 APT84M50B2 84 APT84F50B2 T-MAX® or TO-264 0.062 58 APT58M50J 58 APT58F50J ISOTOP® 0.036 103 APT100M50J 103 APT100F50J ISOTOP® TO-247[B] D3PAK[S] T-MAX®[B2] Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Low-Voltage Power MOS V® MOSFETs/FREDFETs BVDSS (V) 300 200 RDS(ON) Max (Ω) ID (A) MOSFET Part Number 0.085 40 APT30M85BVRG 0.070 48 APT30M70BVRG 48 APT30M70BVFRG TO-247 or D3PAK 0.040 70 APT30M40JVR 70 APT30M40JVFR ISOTOP® 0.019 130 APT30M19JVR 130 APT30M19JVFR ISOTOP® 0.045 56 APT20M45BVRG 56 APT20M45BVFRG 0.038 67 APT20M38BVRG TO-247 or D3PAK 0.022 100 APT20M22B2VRG T-MAX® or TO-264 0.011 175 APT20M11JVR ID (A) FREDFET Part Number Package Style TO-264[L] TO-247 175 APT20M11JVFR TO-247 ISOTOP® ISOTOP®[J] SOT-227 (Isolated Base) Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Datasheets available on www.microsemi.com All products RoHS-compliant 9 Ultra-Fast, Low Gate Charge MOSFETs For 250 kHz–2 MHz Switching Applications The ultra-fast, low gate charge MOSFET family combines the lowest gate charge available in the industry with Microsemi’s proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very low switching losses. The metal gate structure and the layout of these chips provide an internal series gate resistance (EGR) an order of magnitude lower than competitive devices built with a polysilicon gate. These devices are ideally suited for high-frequency and pulsed high-voltage applications. Typical Applications • Class D amplifiers up to 2 MHz Features • Series gate resistance (RG)