MV71007

GaAs Multiplier Diodes TM ® Frequency Multiplier MV71001 – MV71013 Features ● ● ● High Efficiency Low Parasitic Packages Low Thermal Resistance Applications ● ● ● High-Power mmW Transceivers mmW Phase Arrays Drivers for Power Amplifiers ● Frequency Multipliers to 110 GHz and Beyond Description Microsemi’s GaAs frequency multiplier diodes are fabricated from epitaxial layers grown at using Chemical Vapor Deposition. The layers are processed at using proprietary techniques resulting in high Q factor and repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to mmW frequencies. Specifications @ 25°C Part Number MV71001 MV71002 MV71003 MV71004 MV71005 MV71006 MV71007 MV71008 MV71009 MV71010 MV71011 MV71012 MV71013 1 2 CJ @ 0 V ± 10% (pF)1, 3, 4 0.2 0.3 0.4 0.5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 Typ.5 CT @ 0 V CT @ VBR 2.1 2.4 2.6 2.8 2.8 3.1 3.4 3.6 3.7 3.8 3.9 4.0 4.2 Min. VBR @ 10 A (V) 15 15 15 15 30 30 30 30 30 30 30 30 30 Typ. Q @ -4 V2 8000 8000 7500 7000 8000 7500 7000 6500 6000 6000 5700 5700 5000 Maximum Ratings Reverse Voltage Forward Current Incident Power Operating Temperature Storage Temperature Breakdown Voltage 50 mA @ 25°C +23 dBm @ 25°C -55°C to +175°C -55°C to +200°C Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. 3 Tightened tolerances available upon request. 4 Package capacitance are not included in above specifications. 5 Capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon case style selection. IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. 1 The MV71000 Series of products are supplied with a RoHS complaint Gold finish . Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1