MWS11-2

厂商：
MICROSEMI(美高森美)
封装：
描述：
MWS11-2 - CMDA Power Amplifier - Microsemi Corporation

数据手册：

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数据手册
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MWS11-2 数据手册

MWS11-PH22-CS CMDA Power Amplifier A MICROSEMI COMPANY P RELIMINARY The MWS CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-powered digital equipment (dual-mode), spread spectrum systems, and other linear applications in the 1700MHz to 1900MHz band. There are two leadless chip carrier (LCC) package versions for this Power Amplifier family. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is a 6mm x 6mm internally I/O matched module. Single 3V Supply 29dBm Linear Output Power 27dB Linear Gain 38-40% Linear Efficiency 70mA Idle Current W W W . Microsemi . COM 3V 1710-1780MHz CDMA Handsets 3V 1850-1910MHz CDMA Handsets 3V TDMA PCS Handsets Spread Spectrum Systems Other Linear Wireless IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Applications 16-Pin Leadless Package TOP BOTTOM 3mm 3mm Actual Size PACKAGE DATA PACKAGE DATA TJ (°C) 1700-1900MHz CDMA 3mm x 3mm Plastic MLP 16-PIN MWS11-PH22-CS Copyright © 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 MWS11-PH22-CS CMDA Power Amplifier A MICROSEMI COMPANY P RELIMINARY Supply Voltage (VBAT) ........................................................................................... +8.0V DC Supply Voltage (POUT < 31 dBm) ........................................................................... +4.5V DC Control Voltage (VREF)........................................................................................... +3.2V DC Input RF Power ........................................................................................................+6dBm Operating Case Temperature....................................................................... -30°C to 100°C Storage Temperature ................................................................................... -65°C to 150°C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. W W W . Microsemi . COM RF IN VCC1 VCC2 VCC VB1 VB2 RF input. An external series capacitor is required as a DC block. The input match can be improved to < 2:1 by using a series capacitor and shunt inductor. Power supply for first stage and interstage match. VCC should be fed through an inductor terminated with a capacitor on the supply side. Power supply for Second stage and interstage match. VCC should be fed through an inductor terminated with a capacitor on the supply side. Supply for bias reference circuits. First stage control voltage. The VB1 pin can be connected with the other stage control voltages into a single reference voltage through an external resistor bridge. Second stage control voltage. The VB2 pin can be connected with the other stage control voltages into a single reference voltage through an external resistor bridge. RF Output and Power supply for final stage. This is the unmatched collector output of the third stage. A DC Block is required following the matching components. The biasing may be provided via a parallel L-C set for resonance at the operating frequency of 1920MHz to 1980 MHz. It is important to select an inductor with very low DC resistance with a 1A current rating. Alternatively, shunt microstrip techniques are also applicable and provide very low DC resistance. Low frequency bypassing is required for stability. There are three pins designated as RF OUT. This is a bias circuit level ground, isolated from the backside ground contact. Ground for First Stage. This ground should be isolated from the backside ground contact. Ground for Second Stage. This ground should be isolated from the backside ground contact. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. RF OUT GND GND1 GND2 PKG GND PACKAGE DATA PACKAGE DATA Copyright © 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 MWS11-PH22-CS CMDA Power Amplifier A MICROSEMI COMPANY P RELIMINARY Unless otherwise specified, the following specifications apply over the operating ambient temperature -35°C ≤ TA ≤ 85°C except where otherwise noted. Test Conditions: T=25C, Vcc=3.4V, Pout=29dBm. Parameter Usable Frequency Range Typical Frequency Range Linear Power Gain CDMA Adjacent Channel Power Rejection Second Harmonic Third Harmonic Fourth Harmonic CDMA Noise Power Linear Power-Added Efficiency Quiescent Current CDMA Noise Power Input VSWR Output Load VSWR Stability Power Supply Voltage VCC No damage 5:1 3.0 3.4 4.5 V PAE ICQ VREF range: 2.6 to 2.9V 80MHz offset 80MHz offset 36 60 GP ACPR 1.25MHz offset as defined by IS-95 Tuned I/O matching network 24 Symbol Test Conditions MWS11-PH22-CS Typ Max 1910 1750 - 1780 1850 - 1910 26 -46 -35 -40 -45 -139 38 70 -139 < 2:1 10:1 40 90 28 -44 dB dBc dBc dBc dBc dBm/Hz % mA dBm/Hz Units MHz W W W . Microsemi . COM Min 1750 SPECIFICATIONS SPECIFICATIONS Copyright © 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 MWS11-PH22-CS CMDA Power Amplifier A MICROSEMI COMPANY P RELIMINARY W W W . Microsemi . COM Figure 1 – Evaluation Board for the CDMA Power Amp V R EF 2.8V C 15 C 12 C 16 T1 C8 R2 C 17 C9 C 13 V CC 3.5V C 10 R1 VB2 VCC2 VCC T2 VB1 R F IN l ine C 16 C3 M W S 11P H 22-C S line C6 C7 APPLICATION APPLICATION RF Figure 2 – Evaluation Board for the CDMA Schematic Copyright © 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 MWS11-PH22-CS CMDA Power Amplifier A MICROSEMI COMPANY P RELIMINARY W W W . Microsemi . COM NOTES NOTES Preliminary Data – Information contained in this document is pre-production data and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is offered in sample form only and Microsemi reserves the right to change or discontinue this proposed product at any time. Copyright © 2000 Rev. 0.2,2000-12-08 Microsemi Micro WaveSys 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5

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MWS11-2

1. 物料型号： - 型号：MWS11-PH22-CS

2. 器件简介： - MWS11-PH22-CS是一款高效率线性放大器，针对3V移动手持系统设计，主要应用于3V CDMA和TDMA个人通信服务（PCS）电池供电的数字设备（双模式），扩展频谱系统，1700MHz至1900MHz频段，以及其他线性无线应用。该器件采用InGaP/GaAs异质结双极晶体管（HBT）射频集成电路工艺制造。

3. 引脚分配： - RF IN：射频输入，需要外部串联电容器作为直流阻断。 - VCC1：第一级和级间匹配的电源。 - VCC2：第二级和级间匹配的电源。 - VCC：为偏置参考电路供电。 - VB1：第一级控制电压。 - VB2：第二级控制电压。 - RF OUT：射频输出和最终级的电源。 - GND：偏置电路的地，与背面地接触隔离。 - GND1：第一级的地，应与背面地接触隔离。 - GND2：第二级的地，应与背面地接触隔离。 - PKG GND：地连接，封装背面应焊接到与地平面连接的顶层地垫上。

4. 参数特性： - 工作频率范围：1750MHz至1910MHz。 - 线性功率增益：24dB至28dB。 - CDMA邻道功率抑制：-44dBc。 - 二次谐波：-35dBc。 - 三次谐波：-40dBc。 - 四次谐波：-45dBc。 - CDMA噪声功率：-139dBm/Hz。 - 线性功率附加效率：36%至40%。 - 静态电流：60mA至90mA。

5. 功能详解和应用信息： - 该放大器适用于3V 1710-1780MHz CDMA手机、3V 1850-1910MHz CDMA手机、3V TDMA个人通信服务手机、扩展频谱系统等。

6. 封装信息： - 提供两种无引线芯片载体（LCC）封装版本：一种是3mm x 3mm的塑料MLP 16引脚封装，另一种是6mm x 6mm内部1/O匹配模块。

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