MWS11GB11-G1

C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY P REVIEW
 This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz. This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi Gigamite™ package, with significantly smaller footprint for applications where board space is at a premium.




  Advanced InGaP HBT DC to 6GHz Single +5V Supply Small Signal Gain = 16dB P1dB = 19dBm (5V), f=1GHz
SOT-89 3-Pin, & Gigamite Packages W W W . Microsemi . COM      
Broadband Gain Blocks
IF or RF buffer Amplifiers
Driver Stage for Power Amps
Final Power Amp for Low to IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Medium Power Applications
Broadband Test Equipment 
  45 Gain (dB), Pout (dBm), Current (A)00 40 35 30 25 20 15 10 5 0 -5 -1 0 -2 0 -1 5 -1 0 -5 0 5 P in (d B m ) 10 15 P out G a in C u rre n t f = 5 .7 G H z Vcc = 5 V N o m in a l C u r r e n t 20 m A MWS11-GB11 MWS11-GB11
     PK Plastic SOT-89 3 Pin Gigamite MWS11GB11-G1 MWS11GB11-S1 Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. MSW11GB11-S89T) Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 1 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY P REVIEW      DC Supply Voltage..................................................................................................5.0 Vdc Absolute Max. Limit...................................................................................................60mA RF Input Power (Pin)...............................................................................................10 dBm Operating Case Temperature ..........................................................................-40º to +85ºC Storage Temperature.....................................................................................-60º to +150ºC Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.      T a b is GND W W W . Microsemi . COM 1 2 3 R F IN GND RF OUT/ B IA S 
 Plastic SOT-89 3-Pin THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO LEAD, θJT Gigamite θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO LEAD, θJT THERMAL RESISTANCE-JUNCTION TO AMBIENT, XX°C/W XX°C/W XX°C/W PK PACKAGE (Top View) PK XX°C/W 149°C/W XX°C/W Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. 
     



 RF IN GND RF Input pin. A DC blocking capacitor should be used in most applications. Ground connection. Traces should be minimized and connect immediately to ground. RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as: RF OUT / BIAS R= (VCC − VD ) ICC PACKAGE DATA PACKAGE DATA Note that maximum current limit ICC must not be exceeded and a resistor should always be used. A DC blocking capacitor should also be used. Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 2 C ONFIDENTIAL MWS11-GB11-xx InGaP HBT Gain Block A MICROSEMI COMPANY P REVIEW Unless otherwise specified, the following specifications apply over the operating ambient temperature -40°C ≤ TA ≤ +85°C except where otherwise noted. Test conditions: [Enter Test Conditions Here] Parameter Symbol Test Conditions MWS11-GB11-xx Min Typ Max DC 16 34 f=1 GHz f=1.5 GHz 13 3.3 16 4 5 60 6 19 Units   W W W . Microsemi . COM
POWER SUPPLY Application Frequency Range Linear Output Power rd Output 3 Order Intermod Product* Small-Signal Gain Noise Figure Supply Voltage Supply Current f P1dB IP3 G NF VCC f=2GHz GHz dBm dBm dB dB V mA 3.5 4.6 20 DC to >6000 5.5 11.3 11.3 11.4 11.5 11.5 9.9 0.05 7.6