MXP1125
SANTA ANA DIVISION
Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps
P RODUCT P REVIEW
KEY FEATURES
DESCRIPTION
W W W. Microsemi . COM
Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents. A version with attached leads is available.
Oxide passivated structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Anode and cathode contacts on same side Forward voltage decreases with radiation exposure Qualified for space applications Thin construction for fit with photovoltaic cells APPLICATIONS/BENEFITS APPL APPLICATIONS/BENEFITS
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage
MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)
Description
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C Junction Temperature Range Storage Temperature Range
Symbol
VRRM VRWM VR IF(ave) Tj Tstg
Max.
50 50 50 1.0 -65 to +150 -65 to +200
Unit
Volts Volts Volts Amps °C °C
ELECTRICAL PARAMETERS
Description
Reverse (Leakage) Current (in dark) Forward Voltage pulse test, pw= 300 µs Junction Capacitance Breakdown Voltage
Symbol
IR25 IR25 VF1 VF2 Cj1 BVR
Conditions
VR= 4 Vdc, Ta= 25°C VR= 50 Vdc, Ta= 25°C IF= 1 A, Ta= 25°C IF= 3.5 A, Ta= 25°C VR= 4 Vdc IR= 200 µA, Ta= 25°C
Min
Typ.
5 20 850 940 600 90
Max
200 1000 1000 1000
Unit
nA nA mV mV pF V
MXP1125 MXP1125
50
Copyright 2002 MXP1125.PDF, 2002-05-01
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
MXP1125
SANTA ANA DIVISION
Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps
P RODUCT P REVIEW
Mechanical Outline
W W W. Microsemi . COM
MXP1125 physical dimensions
120
93
anode
mils = 0.001 inches
R = 5.0, 8 pl.
cathode
29
0 0 24 88 159 mils = 0.001 inches 132 vertical dimensions in micrometers 130 125 electronic glass silver metallization 233 250
5 0
MECHANICALS MECHANICALS
Copyright 2002 MXP1125.PDF, 2002-05-01
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
MXP1125
SANTA ANA DIVISION
Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps
P RODUCT P REVIEW W W W. Microsemi . COM
MXP1125 typical forward characteristic
1.E+01
3 2 4
1.E+00
0.5
1
If (amperes)
1.E- 01
0.1
1.E- 02
0.01
.
1.E- 03
0.001 0.0005
1.E- 04 0.40
0.0001
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
Vf (volts)
MXP1125 typical capacitance vs. voltage characteristic
1000
pF 800
600
GRAPHS GRAPHS
400
0
10
20
30 40 Vr (volts)
50
60
70
80
Copyright 2002 MXP1125.PDF, 2002-05-01
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 3
MXP1125
SANTA ANA DIVISION
Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps
P RODUCT P REVIEW
NOTES
W W W. Microsemi . COM
NOTES NOTES
Copyright 2002 MXP1125.PDF, 2002-05-01
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4
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