MXP1144P

MXP1144P SANTA ANA DIVISION PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps P RODUCT P REVIEW KEY FEATURES DESCRIPTION W WW . Microsemi . C OM Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents. A version with attached leads is available. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Oxide passivated structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Triangular shape to fit in corner near flat of photovoltaic cell Forward voltage decreases with radiation exposure Targeted for terrestrial applications with silicon photovoltaic cells Thin construction for fit with photovoltaic cells APPLICATIONS/BENEFITS Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRWM VR IF(ave) Tj Tstg MAX. 50 50 50 1.0 -65 to +150 -65 to +200 UNIT Volts Volts Volts Amps °C °C ELECTRICAL PARAMETERS DESCRIPTION Reverse (Leakage) Current (in dark) Forward Voltage pulse test, pw= 300 µs Junction Capacitance Breakdown Voltage SYMBOL IR25 IR25 VF1 VF2 Cj1 BVR CONDITIONS VR= 4 Vdc, Ta= 25°C VR= 50 Vdc, Ta= 25°C IF= 400 mA, Ta= 25°C IF= 1.0 A, Ta= 25°C VR= 4 Vdc IR= 200 µA, Ta= 25°C MIN TYP. 10 20 750 770 1050 60 MAX 200 775 800 1300 UNIT nA nA mV mV pF V MXP1144P MXP1144P 50 Copyright © 2002 MXP1144.PDF, 2003-08-15 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 1 MXP1144P SANTA ANA DIVISION PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps P RODUCT P REVIEW Mechanical Outline W WW . Microsemi . C OM L 315.0 289.0 R = 4.0, 6 PL. metal (cathode) 26.0 0 0 26.0 26.0 289.0 315.0 MXP1144P MECHANICALS MECHANICALS all dimensions in mils Standard die thickness is 5.0 +/- 0.5 mils Copyright © 2002 MXP1144.PDF, 2003-08-15 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MXP1144P SANTA ANA DIVISION PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps P RODUCT P REVIEW Typical location with 100mm diameter photovoltaic cell W WW . Microsemi . C OM diode location MECHANICALS MECHANICALS Copyright © 2002 MXP1144.PDF, 2003-08-15 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 3 MXP1144P SANTA ANA DIVISION PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps P RODUCT P REVIEW NOTES W WW . Microsemi . C OM NOTES NOTES Copyright © 2002 MXP1144.PDF, 2003-08-15 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4