MXP4005

Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET DESCRIPTION KEY FEATURES W WW . Microsemi . C OM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. Microsemi will assemble die on submounts and custom configurations. High Responsivity Low Dark Current Extremely Low Capacitance 12GHz , High Bandwidth Custom Sub-mounts Large 40um Bond Pad APPLICATIONS 1310nm CATV Optical Applications 1550nm DWDM Optical Applications SONET/SDH (FEC), ATM 10Gigabit Ethernet, Fibre Channel 10Gbps NRZ or RZ modulation Optical Test equipment BENEFITS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Planar passivation Low Contact Resistance PRODUCT HIGHLIGHT Typical Spectral Responsivity Responsivity (Amps / Watt) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 800 508um ± 25um Ø 40um ± Bond MXP4 45 508um ± 25um 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nm) MICROS Active Area 20um Anod MXP4005 MXP4005 150 ± 20um 508um ± 25um Copyright © 2001 Rev. 1.1 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET CHARACTERISTICS Test conditions (unless otherwise noted): TA = 25 C, VR = 5 Volts o W WW . Microsemi . C OM Parameter MAXIMUM RATINGS Operating Junction Temperature Range Storage Temperature Range Maximum Soldering Temperature ELECTRICAL CHARACTERISTICS Active Area Diameter Responsivity (1) Linearity (2) Dark Current Breakdown Voltage Capacitance Bandwidth Symbol Test Conditions Min -20 -55 MXP4003 Typ Max +85 +125 +260 40 1.0 0.86 5 1.0 Units o o TJ TSTG 10 seconds maximum at temperature C C o C μm A/W % nA Volts pF GHz R L ID BVR C BW VR = 5V, λ= 1550nm VR = 5V, λ=1310nm VR = 5V @10mW input power VR = 5V IR = 10μA VR = 5V VR = 5V, λ= 1550nm @3dB 0.95 0.80 20 0.22 10 Note: 1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications 2. Maximum distortion from nominal @ 10mW input power PRECAUTIONS FOR USE ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. ELECTRICALS ELECTRICALS Copyright © 2001 Rev. 1.1 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2