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SD1014-02

SD1014-02

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    SD1014-02 - RF & MICROWAVE TRANSISTORS - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
SD1014-02 数据手册
SD1014-02 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P R O D UC T P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM The SD1014-02 is an epitaxial silicon NPN planar transistor designed primarily for VHF mobile and marine transmitters. The device utilizes emitter ballasting resistors and improved metallization systems to achieve extreme ruggedness under severe operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 175 !" MHz 12.5 Volts !" Common Emitter !" P !" OUT = 15 W Min. G !" P = 6.3 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFIT APPLICATIONS/BENEFITS VHF FM Mobile !" Applications Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 2.5 31 +200 -65 to +150 Unit V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 5.6 °C/W SD1014-02 SD1014-02 Copyright  2000 MSC1629.PDF 2000-11-28 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 SD1014-02 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P R O D UC T P REVIEW W W W . Microsemi . COM STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Symbol BVCES BVCEO BVEBO ICBO hFE IC = 10 mA IC = 20 mA IE = 2 m A VCB =15 V VCE = 5 V Test Conditions VBE = 0 V IB = 0 m A IC = 0 m A IE = 0 m A IC = 500 mA SD1014-02 Min. Typ. Max. 36 18 4.0 0.5 5 200 Units V V V mA DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Symbol POUT GP ηC COB f = 175 MHz f = 175 MHz f = 175 MHz f = 1 MHz Test Conditions PIN = 3.5 W PIN = 3.5 W POUT = 3.5 W VCB = 15 V VCE = 12.5 V VCE = 12.5 V VCE = 12.5 V Min. 15 6.3 60 SD1014-02 Typ. Max. Units W dB % pF 85 IMPEDANCE DATA PIN (W) 5 PIN. = 3.0 W VCC = 12.5 V POUT (W) 27.6 ZIN (Ω) 1.0 – j 1.4 ZOUT (Ω) 3.3 + j 1.2 ELECTRICALS ELECTRICALS Copyright  2000 MSC1629.PDF 2000-11-28 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 2 SD1014-02 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P R O D UC T P REVIEW W W W . Microsemi . COM PACKAGE DATTA PACKAGE DATTA Copyright  2000 MSC1629.PDF 2000-11-28 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 3 SD1014-02 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P R O D UC T P REVIEW W W W . Microsemi . COM NOTES NOTES Copyright  2000 MSC1629.PDF 2000-11-28 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 4
SD1014-02
1. 物料型号: - 型号:SD1014-02

2. 器件简介: - SD1014-02是一款外延硅NPN平面晶体管,主要用于VHF移动和海上发射器。该器件采用发射极电阻和改进的金属化系统,在恶劣工作条件下实现极高的耐用性。

3. 引脚分配: - 引脚1:集电极 - 引脚2:发射极 - 引脚3:基极 - 引脚4:发射极

4. 参数特性: - 工作频率:175 MHz - 工作电压:12.5伏特,共发射极 - 最小输出功率:15瓦特 - 增益:6.3分贝 - 绝对最大额定值: - 集电极-基极电压(VCBO):36伏特 - 集电极-发射极电压(VCEO):18伏特 - 发射极-基极电压(VEBO):4.0伏特 - 设备电流(Ic):2.5安培 - 功率耗散(PDIss):31瓦特 - 结温(TJ):+200摄氏度 - 存储温度(TSTG):-65至+150摄氏度

5. 功能详解: - 该晶体管适用于VHF FM移动应用。

6. 应用信息: - VHF FM移动应用。

7. 封装信息: - 封装类型:.3804LSTUD(M135)环氧树脂密封。
SD1014-02 价格&库存

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