SD1019

SD1019 RF AND MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 MHz 13.5 V COMMON EMITTER POUT = 30 W MIN. GAIN = 4.5 dB DESCRIPTION: The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It uses nichrome aluminum metallization to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS Tstg Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature 65 35 4 9 117 -65 to +150 +200 V V V A W °C °C THERMAL DATA RTH(j-c) Rev. B – June 2008 Junction-Case Thermal Resistance 1.7 °C/W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. SD1019 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCBO BVCEO BVEBO ICBO hFE IC = 200 mA IC = 20 mA IE = 10 mA VCB = 30 V VCE = 5 V IE = 0 IB = 0 IC = 0 IE = 0 IC = 500 mA 65 35 4 --5 ------1.5 --- ----------- V V V mA --- DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP COB f = 150 MHz f = 150 MHz f = 1MHz PIN = 10.6 W PIN = 10.6 W VCB = 30 V VCE = 13.5 V VCE = 13.5 V 30 4.5 --- ------- ----150 W dB pF Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. SD1019 TEST CIRCUIT Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. SD1019 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.