SG2803J-883B

SG2800 Series High Voltage Medium Current Driver Arrays Description Features The SG2800 series integrates eight NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 50V breakdown voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These Darlington array are designed to operate from -55°C to 125°C ambient temperature in a 18pin dual in-line ceramic (J) package and 20-pin leadless chip carrier (LCC). In addition a plastic version is available in 18 lead SOWB (DW) package with a reduced temperature range of 0°C to 70°C.      Eight NPN Darlington Pairs Collector Currents to 600mA Output Voltages from 50V to 95V Internal Clamping Diodes for Inductive loads DTL, TTL, PMOS, or CMOS Compatible inputs High Reliability Features Available To MIL-STD-883 – 883, ¶ 1.2.1 Available to DSCC – Standard Microcircuit Drawing (SMD)  MIL-M38510/14106BVA - SG2801J-JAN  MIL-M38510/14107BVA - SG2802J-JAN  MIL-M38510/14108BVA - SG2803J-JAN  MIL-M38510/14109BVA - SG2804J-JAN  MSC-AMS Level "S" Processing Available   Schematics (each Darlington pair) SG2801/2811/2821 (Each Driver) 7.2kΩ SG2802/2812 (Each Driver) 7V +V 3kΩ SG2803/2813/2823 (Each Driver) +V 10kΩ +V 2.7kΩ 7.2kΩ 3kΩ 7.2kΩ SG2804/2814/2824 (Each Driver) 10.5kΩ +V SG2805/2815 (Each Driver) 3kΩ +V 10.5kΩ 7.2kΩ 3kΩ 7.2kΩ 3kΩ Figure 1 · Schematics (showing each Darlington pair) November 2014 Rev. 1.7 www.microsemi.com © 2014 Microsemi Corporation- Analog Mixed Signal 1 High Voltage Medium Current Mode PWM Controllerent Driver Array Connection Diagrams and Ordering Information Ambient Temperature Type Package Part Number Packaging Type Connection Diagram SG28XXJ-883B SG2801J-JAN 1 18 SG2802J-JAN 2 17 3 16 4 15 SG2803J-JAN -55°C to 125°C J 18-Pin Ceramic DIP Package SG2804J-JAN 5 14 SG2803J-DESC 6 13 SG2821J-DESC 7 12 8 11 9 10 CERDIP SG2823J-DESC SG2824J-DESC SG28XXJ 0°C to 70°C DW 18-Pin Plastic SOIC Package DW Package: RoHS Compliant / Pbfree Transition DC: 0516 SG2803DW SOWB Pinout same as J package DW Package: RoHS / Pb-free 100% Matte Tin Lead Finish 3 SG28XXL-883B 2 1 20 19 SG2803L-DESC -55°C to 125°C L 20-Pin Ceramic Leadless Chip Carrier SG2821L-DESC SG2823L-DESC SG2824L-DESC CLCC 4 18 5 17 6 16 7 15 14 SG28XXL 9 10 11 12 13 Note: 1. Contact factory for JAN and DESC product availability. 2. All parts are viewed from the top. 3. See Selection Guide for specific device types. 4. Hermetic Packages J, L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions. 2 Absolute Maximum Ratings1 Absolute Maximum Ratings1 Value Units Output Voltage, VCE (SG2800, 2810 series) 50 V (SG2820 series) 95 V Input Voltage, VIN (SG2802,3,4 series) 30 V Continuous Input Current, IIN 25 mA Continuous Collector Current, IC (SG2800, 2820) 500 mA (SG2810) 600 mA Plastic (DW Package) 150 °C Hermetic (J, L Packages) 150 °C -65 to 150 C 300 °C 260 (+0, -5) °C Parameter Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10 sec.) RoHS Peak Package Solder Reflow Temperature (40 sec. max. exp.) Note: 1. Exceeding these ratings could cause damage to the device. All voltages are with respect to ground. Currents are positive into, negative out of specified terminal. Thermal Data Value Units Thermal Resistance-Junction to Case, θJC 25 °C/W Thermal Resistance-Junction to Ambient, θJA 70 °C/W Thermal Resistance-Junction to Case, θJC 35 °C/W Thermal Resistance-Junction to Ambient, θJA 120 °C/W 90 °C/W Parameter J Package L Package DW Package Thermal Resistance-Junction to Ambient, θJA Note: 1. Junction Temperature Calculation: TJ = TA + (PD x θJA). 2. The above numbers for θJC are maximums for the limiting thermal resistance of the package in a standard mounting configuration. The θJA numbers are meant to be guidelines for the thermal performance of the device/pcboard system. All of the above assume no ambient airflow. 3 High Voltage Medium Current Mode PWM Controllerent Driver Array Recommended Operating Conditions1 Symbol Parameter Recommended Operating Conditions Min. Typ. Units Max. Output Voltage VCE SG2800, SG2820 series 50 V SG2810 series 95 V 350 mA 500 mA Peak Collector Current, IC IC 2.6 V SG2800, SG2820 series SG2810 series Operating Ambient Temperature Range: J, L Packages -55 125 °C DW Packages 0 70 °C Note: 1. Range over which the device is functional. Selection Guide Device VCE Max IC Max Logic Inputs General Purpose PMOS, CMOS SG2801 SG2802 14V-25V PMOS 500mA SG2803 5V TTL, CMOS SG2804 6V-15V CMOS, PMOS SG2811 General Purpose PMOS, CMOS 50V SG2812 14V-25V PMOS 600mA SG2813 SG2814 6V-15V CMOS, PMOS SG2815 High Output TTL SG2821 General Purpose PMOS, CMOS SG2823 SG2824 4 5V TTL, CMOS 95V 500mA 5V TTL, CMOS 6V-15V CMOS, PMOS Electrical Characteristics Electrical Characteristics (Unless otherwise specified, these specifications apply over the operating ambient temperatures of -55°C ≤ TA ≤ 125°C, for the J & L devices and 0°C ≤ TA ≤ 70°C, for the DW device. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) Table 1 · SG2801 thru SG2804 Symbol Parameter ICEX Output Leakage Current (Figure 2a) Output Leakage Current (Figure 2b) VCE(SAT) IIN(ON) Collector – Emitter (VCE(SAT) (Figure 3) Input Current (Figure 4) Applicable Devices Limits Temp. Test Conditions Units Min All Type Max VCE = 50V 100 µA SG2802 VCE = 50V, VIN = 6V 500 µA SG2804 VCE = 50V, VIN = 1V 500 µA All TA = TMIN TA = TMIN IC = 350mA, IB = 850µA IC = 200mA, IB = 550µA 1.6 1.3 1.8 1.5 V TA = TMIN TA = 25°C IC = 100mA, IB = 350µA IC = 350mA, IB = 500µA 1.1 1.25 1.3 1.6 V V TA = 25°C TA = 25°C IC = 200mA, IB = 350µA IC = 100mA, IB = 250µA 1.1 0.9 1.3 1.1 V V TA = TMAX TA = TMAX IC = 350mA, IB = 500µA IC = 200mA, IB = 350µA 1.6 1.3 1.8 1.5 V V TA = TMAX IC = 100mA, IB = 250µA 1.1 1.3 V SG2802 VIN = 17V 480 850 1300 µA SG2803 VIN = 3.85V 650 930 1350 µA VIN = 5V 240 350 500 µA VIN = 12V 650 1000 1450 µA TA = TMAX IC = 500µA 25 50 TA = TMIN VCE = 2V, IC = 300mA 18 V TA = TMAX TA = TMIN VCE = 2V, IC = 300mA VCE = 2V, IC = 200mA 13 3.3 V V TA = TMIN TA = TMIN VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA 3.6 3.9 V V TA = TMAX TA = TMAX VCE = 2V, IC = 200mA VCE = 2V, IC = 250mA 2.4 2.7 V V TA = TMAX TA = TMIN VCE = 2V, IC = 300mA VCE = 2V, IC = 125mA 3.0 6.0 V V TA = TMIN TA = TMIN VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA 8.0 10 V V TA = TMIN TA = TMAX VCE = 2V, IC = 350mA VCE = 2V, IC = 125mA 12 5.0 V V TA = TMAX TA = TMAX VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA 6.0 7.0 V V TA = TMAX VCE = 2V, IC = 350mA 8.0 V SG2804 IIN(OFF) Input Current (Figure 5) All SG2802 SG2803 VIN(ON) V Input Voltage (Figure 6) SG2804 µA 5 High Voltage Medium Current Mode PWM Controllerent Driver Array Applicable Devices Temp. Symbol Parameter hFE D-C Forward Current Transfer Ratio (Figure 3) CIN Input 1 Capacitance TA = 25°C TPLH Turn-On Delay TA = 25°C TPHL Turn-Off Delay TA = 25°C IR Clamp Diode Leakage Current (Figure 7) VF Clamp Diode Forward Voltage (Figure 8) SG2801 Test Conditions Limits Min Units Type Max 15 25 pF 0.5 EIN to 0.5 EOUT 250 1000 ns 0.5 EIN to 0.5 EOUT 250 1000 ns 50 µA 2.0 V TA = TMIN VCE = 2V, IC = 350mA 500 TA = 25°C VCE = 2V, IC = 350mA 1000 All VR = 50V 1.7 IF = 350mA Note: ¹This parameter, although guaranteed, are not tested in production. Table 2 · SG2811 thru SG2815 Symbol Parameter ICEX Output Leakage Current (Figure 2a) Output Leakage Current (Figure 2b) VCE(SAT) IIN(ON) Collector – Emitter (VCE(SAT) (Figure 3) Input Current (Figure 4) Applicable Devices Limits Temp. Units Min All Type Max VCE = 50V 100 µA SG2812 VCE = 50V, VIN = 6V 500 µA SG2814 VCE = 50V, VIN = 1V 500 µA All TA = TMIN IC = 500mA, IB = 1100µA 1.8 1.1 V TA = TMIN IC = 350mA, IB = 850µA 1.6 1.8 V TA = TMIN IC = 200mA, IB = 550µA 1.3 1.5 V TA = 25°C IC = 500mA, IB = 600µA 1.7 1.9 V TA = 25°C IC = 350mA, IB = 500µA 1.25 1.6 V TA = 25°C IC = 200mA, IB = 350µA 1.1 1.3 V TA = TMAX IC = 500mA, IB = 600µA 1.8 2.1 V TA = TMAX IC = 350mA, IB = 500µA 1.6 1.8 V TA = TMAX IC = 200mA, IB = 350µA 1.3 1.5 V SG2812 VIN = 17V 480 850 1300 µA SG2813 VIN = 3.85V 650 930 1350 µA VIN = 5V 240 350 500 µA VIN = 12V 650 1000 1450 µA VIN = 3V 1180 1500 2400 µA 25 50 SG2814 SG2815 IIN(OFF) Input Current (Figure 5) All VIN(ON) Input Voltage (Figure 6) SG2812 6 Test Conditions TA = TMAX IC = 500µA TA = TMIN VCE = 2V, IC = 500mA VCE = 2V, IC = 500mA TA = TMAX µA 23.5 17 V V Electrical Characteristics Symbol Parameter Applicable Devices SG2813 VIN(ON) Input Voltage (Figure 6) SG2814 Limits Temp. Test Conditions Units Min Type Max TA = TMIN VCE = 2V, IC = 250mA 3.6 V TA = TMIN VCE = 2V, IC = 300mA 3.9 V TA = TMIN VCE = 2V, IC = 500mA 6.0 V TA = TMAX VCE = 2V, IC = 250mA 2.7 V TA = TMAX VCE = 2V, IC = 300mA 3.0 V TA = TMAX VCE = 2V, IC = 500mA 3.5 V TA = TMIN VCE = 2V, IC = 275mA 10 V TA = TMIN VCE = 2V, IC = 350mA 12 V TA = TMIN VCE = 2V, IC = 500mA 17 V TA = TMAX VCE = 2V, IC = 275mA 7.0 V TA = TMAX VCE = 2V, IC = 350mA 8.0 V TA = TMAX VCE = 2V, IC = 500mA 9.5 V TA = TMIN VCE = 2V, IC = 350mA 3.0 V TA = TMIN VCE = 2V, IC = 500mA 3.5 V TA = TMAX VCE = 2V, IC = 350mA 2.4 V TA = TMAX VCE = 2V, IC = 500mA 2.6 V TA = TMIN VCE = 2V, IC = 500mA 450 TA = 25°C VCE = 2V, IC = 500mA 900 15 25 pF SG2815 hFE D-C Forward Current Transfer Ratio (Figure 3) SG2811 CIN Input 1 Capacitance TA = 25°C TPLH Turn-On Delay TA = 25°C 0.5 EIN to 0.5 EOUT 250 1000 ns TPHL Turn-Off Delay TA = 25°C 0.5 EIN to 0.5 EOUT 250 1000 ns IR Clamp Diode Leakage Current (Figure 7) 50 µA Clamp Diode Forward Voltage (Figure 8) 2.0 V VF 2.5 V All VR = 50V IF = 350mA 1.7 IF = 500mA Note: ¹This parameter, although guaranteed, are not tested in production. Table 3 · SG2821 thru SG2824 Symbol Parameter Output Leakage Current (Figure 2a) ICEX Output Leakage Current Applicable Devices All SG2824 Limits Temp. Test Conditions Units Min Type Max VCE = 95V 100 µA VCE = 95V, VIN = 1V 500 µA (Figure 2b) 7 High Voltage Medium Current Mode PWM Controllerent Driver Array Symbol VCE(SAT) Parameter Collector – Emitter (VCE(SAT) (Figure 3) Applicable Devices All IC = 350mA, IB = 850µA Limits Type 1.6 Max 1.8 IC = 200mA, IB = 550µA 1.3 1.5 V TA = TMIN IC = 100mA, IB = 350µA 1.1 1.3 V TA = 25°C IC = 350mA, IB = 500µA 1.25 1.6 V TA = 25°C IC = 200mA, IB = 350µA 1.1 1.3 V TA = 25°C IC = 100mA, IB = 250µA 0.9 1.1 V TA = TMAX IC = 350mA, IB = 500µA 1.6 1.8 V TA = TMAX IC = 200mA, IB = 350µA 1.3 1.5 V TA = TMAX IC = 100mA, IB = 250µA 1.1 1.3 V Temp. Test Conditions TA = TMIN TA = TMIN IIN(ON) IIN(OFF) Input Current (Figure 5) SG2823 VIN(ON) Input Voltage (Figure 6) SG2824 TPLH D-C Forward Current Transfer Ratio (Figure 3) Input 1 Capacitance Turn-On Delay TPHL Turn-Off Delay IR Clamp Diode Leakage Current (Figure 7) VF Clamp Diode Forward Voltage (Figure 8) hFE CIN 930 1350 µA VIN = 5V 240 350 500 µA VIN = 12V 650 1000 1450 µA TA = TMAX IC = 500µA 25 50 TA = TMIN VCE = 2V, IC = 200mA 3.3 V TA = TMIN VCE = 2V, IC = 250mA 3.6 V TA = TMIN VCE = 2V, IC = 300mA 3.9 V TA = TMAX VCE = 2V, IC = 200mA 2.4 V TA = TMAX VCE = 2V, IC = 250mA 2.7 V TA = TMAX VCE = 2V, IC = 300mA 3.0 V TA = TMIN VCE = 2V, IC = 125mA 6.0 V TA = TMIN VCE = 2V, IC = 200mA 8.0 V TA = TMIN VCE = 2V, IC = 275mA 10 V TA = TMIN VCE = 2V, IC = 350mA 12 V TA = TMAX VCE = 2V, IC = 125mA 5.0 V TA = TMAX VCE = 2V, IC = 200mA 6.0 V TA = TMAX VCE = 2V, IC = 275mA 7.0 V TA = TMAX VCE = 2V, IC = 350mA 8.0 V TA = TMIN VCE = 2V, IC = 350mA 500 TA = 25°C VCE = 2V, IC = 350mA 1000 15 25 pF 0.5 EIN to 0.5 EOUT 250 1000 ns 0.5 EIN to 0.5 EOUT 250 1000 ns 50 µA 2.0 V µA SG2821 TA = 25°C All VR = 95V IF = 350mA Note: ¹This parameter, although guaranteed, are not tested in production. 8 V 650 SG2824 All Units VIN = 3.85V SG2823 Input Current (Figure 4) Min 1.7 Parameter Test Figures Parameter Test Figures (See figure numbers in Electrical Characteristics Tables 1 to 3) OPEN VCE OPEN OPEN VCE ICEX ICEX µA µA hFE = OPEN VIN IB Figure 2a ICEX Test Circuit Figure 2b ICEX Test Circuit V VCE IC IB IC Figure 3 hFE, VCE(sat) Test Circuit OPEN OPEN VCE µA IC mA µA OPEN Figure 4 IIN (ON) Test Circuit OPEN Figure 5 IIN (OFF) Test Circuit VR µA IR V OPEN V IF OPEN V VCE Figure 6 VIN(ON) Test Circuit IC Figure 7 IR Test Circuit Figure 8 VF Test Circuit 9 High Voltage Medium Current Mode PWM Controllerent Driver Array Characteristic Curves 400 500 300 Output Current - (mA) Collection Current - (mA) 600 400 300 200 100 0 0 .2 .4 .6 1.0 1.2 .8 2801 2804 2803 100 0 1.4 1.6 1.8 0 1 2 Saturation Voltage - (V) 3 4 5 8 9 10 11 12 Input Voltage - (V) Figure 8 · Output Characteristics Figure 9 · Output Current Vs. Input Voltage 400 2.5 2.0 Input Current - (mA) 300 Output Current - (mA) 2802 200 All Types 200 100 Maximum 1.5 1.0 Typical 0.5 0 0 0 50 100 150 200 250 300 350 400 0 12 14 16 18 20 22 24 26 Input Voltage - (V) Input Current - (µA) Figure 10 · Output Current Vs. Input Current Figure 11 · Input Characteristics - SG2802 2.5 2.5 2.0 2.0 Input Current - (mA) Input Current - (mA) Maximum 1.5 1.0 Typical 0.5 Maximum 1.0 Typical 0.5 0 0 0 10 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Input Voltage - (V) Figure 12 · Input Characteristics - SG2803 10 1.5 0 5.0 6.0 7.0 8.0 9.0 10 11 Input Voltage - (V) Figure 13 · Input Characteristics - SG2804 12 Characteristic Curves - Continued Characteristic Curves - Continued o Peak Collector Current in mA at +70 C 600 Recommended maximum current - SG2804 2 400 3 4 5 6 7 200 Number of outputs Conducting simultaniously 0 0 20 40 60 80 100 Percent Duty Cycle - (%) Figure 14 · Peak Collector Current Vs. Duty Cycle 11 High Voltage Medium Current Mode PWM Controllerent Driver Array Package Outline Dimensions Controlling dimensions are in inches, metric equivalents are shown for general information. Dim D 18 MAX MIN MAX A A1 A2 2.06 0.10 2.03 2.65 0.30 2.55 0.081 0.004 0.080 0.104 0.012 0.100 B c D 0.25 0.23 - 0.51 0.32 13.21 0.010 0.009 - 0.020 0.013 0.520 E 7.40 7.75 0.291 0.305 e H 1.27 BSC 10.00 10.65 E 9 1 e B L A2 A Seating Plane A1 c INCHES MIN 10 H MILLIMETERS L Θ *LC 0.4 0 - 1.27 8 0.10 0.50 BSC 0.394 0.419 0.016 0 - 0.050 8 0.004 *Lead coplanarity Note: Dimensions do not include protrusions; these shall not exceed 0.155mm (.006”) on any side. Lead dimension shall not include solder coverage. Figure 15 · DW Package Dimensions 12 Package Outline Dimensions Package Outline Dimensions Controlling dimensions are in inches, metric equivalents are shown for general information. A B C MILLIMETERS MIN MAX 24.38 5.59 7.11 5.08 INCHES MIN MAX 0.960 0.220 0.280 0.200 D F G 0.38 0.51 1.02 1.77 2.54 BSC 0.015 0.020 0.040 0.070 0.100 BSC H J K 0.20 3.18 2.03 0.38 5.08 0.008 0.125 0.080 0.015 0.200 L M 7.37 - 7.87 15° 0.290 - 0.310 15° Dim A 10 B 18 9 1 L C F K Seating Plane H J M D G Note: Dimensions do not include protrusions; these shall not exceed 0.155mm (.006”) on any side. Lead dimension shall not include solder coverage. Figure 16 · J 18-Pin Ceramic Dual Inline Package Dimensions E3 D Dim MILLIMETERS MIN MAX INCHES MIN MAX D/E E3 e 8.64 9.14 8.128 1.270 BSC 0.340 0.360 0.320 0.050 BSC B1 L A 0.635 TYP 1.02 1.52 1.626 2.286 0.025 TYP 0.040 0.060 0.064 0.090 h A1 A2 1.016 TYP 1.372 1.68 1.168 0.040 TYP 0.054 0.066 0.046 L2 B3 1.91 2.41 0.203R 0.075 0.95 0.008R E A A1 L2 L 8 3 Note: 1 13 1. All exposed metalized area shall be gold plated 60 micro-inch minimum thickness over nickel plated unless otherwise specified in purchase order. h A2 18 B1 e B3 Figure 17 · L 20-Pin Ceramic Leadless Chip Carrier (LCC) Package Outline Dimensions 13 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,400 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 E-mail: sales.support@microsemi.com © 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this SG2800–1.7/11.14