SM0502

Control Devices CERAMIC MELF PIN DIODES • • • • • Magnetic/Non-Magnetic“Cer-Met” (MELF) Packages Very Low Inductance, Full Faced Bonding Hermetic, Low Loss and Low Distortion Applications High Volume Manufacturing Capability 100% TX Screening Available APPLICATIONS DESCRIPTION This new line of ‘MELF’ high power PIN diodes are hermetically sealed surface mount packaged devices with full face bonded chips for low inductance construction. The MELF ceramic package has square end terminations which are ideal for surface mount and pick and place operations. The PIN diode chips are coated with a special hard glass passivation which is required for high power applications to enhance the reliability resulting in MTBF’s of greater than one million hours. These MELF diodes are used as switching, attenuating and phase shifting elements from HF through 2 GHz and have breakdown voltage ratings up to 700 volts. Non-magnetic “Cer-Met” (MELF’s) are also used as switching elements in MRI (magnetic resonance imaging) applications. Conventional magnetic MELF packages are used in cellular, beam steering applications, filter switch banks, and antenna tuning units.. Microsemi – Lowell 75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600 Control Devices CERAMIC MELF ELECTRICAL SPECIFICATION AT 25°C PART NO. CASE STYLE SUGGESTED VOLTAGE RATING IR < 10µa VR TOTAL CAPACITANCE F = 1 MHz VR=50V pF (MAX) SERIES RESISTANCE If=100mA F=100MHz OHM (MAX) SERIES RESISTANCE If=200mA F=100MHz OHM (TYP) CARRIER LIFETIME If=10mA µSEC (TYP) TYPICAL THERMAL RESISTANCE °C/W SM0502 SM0504 SM0508 SM0509 SM0511 SM0512 SM0812 SM1001 SM1002 SM1003 M1 M1 M1 M1 M1 M1 M1 M1 M1 M1 500 500 500 500 500 500 700 700 50 35 0.50 0.60 0.90 1.20 1.25 1.50 1.30 1.30 1.20 1.2 @ 20V 0.70 0.60 0.40 0.35 0.30 0.25 0.40 0.35 .75 @50mA .50 @ 10mA 0.55 0.45 0.25 0.20 0.15 0.12 0.25 0.20 0.20 0.10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4.0 0.6 35 20 15 15 15 15 15 15 15 25 ABSOLUTE MAXIMUM RATINGS AT 25°C Peak Inverse Voltage (PIV): Forward Current (IF): Power Dissipation (PD): Junction Temp. (Operating): Storage Temp. (Non-Operating): : Same as VB 1 AMP (1µS Pulse) T J ( MAX ) β MAX = θJ JC -55°C to +150°C -55°C to +150°C TOC Case style M2 available as special option / some limitations apply / consult factory for details. M1 INCHES MIN MAX 0.080 0.095 0.115 0.135 0.008 0.030 M2 INCHES MIN MAX 0.100 0.120 0.188 0.205 0.008 0.030 DIM A B C Non-magnetic packages are available upon request. Microsemi – Lowell 75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600