UA0L30VM

UA0L30VM 30 GHz Broadband Amplifier Module Features • 23 dBm saturated output power • 30 dB gain • 2.7 W power dissipation • Small size package Application • mm-wave systems • High frequency test instrumentation • Broadband gain amplifier Description The UA0L30VM Amplifier is a general-purpose broadband amplifier designed for microwave communications, test equipment, and military systems. Its small size and exceptional performance make it a versatile gain block which can improve power and gain in a single hermetically sealed package potentially replacing 2 or 3 narrower band amplifiers. The UA0L30VM provides a complete amplifier module package with a wide frequency range of 100 kHz to 30 GHz, low power dissipation, ample output power, low noise figure and gain control. The UA0L30VM complies with the ESDS Component Sensitivity Classification 1B per ESD STM5.1-1998. Key Characteristics: (Specifications pertain to case temperature range 0 to +75°C) Vd1=Vd2=Vd3=7V +/- 5%, Vg1=Vg2= -0.15V, Vg3= -0.05V; Zo=50Ω 100kHz - 30GHz Parameter Description Min Typ Max S21 (dB) Small Signal Gain 27 30 - S11 (dB) Input Match - -15 -10 S22 (dB) Output Match - -15 -10 * Vg1/ Vg2/ Vg3 adjusted for peak gm SMD-00067 Rev H Subject to Change Without Notice 1 of 4 UA0L30VM Typical Performance Small Signal, forward gain (S21) vs. Frequency Small signal, input (S11) & output return (S22) loss vs. Frequency Drain Current and gm vs. Gate Voltage 1st and 2nd amplifier stages SMD-00067 Rev H Subject to Change Without Notice Drain Current and gm vs. Gate Voltage 3rd amplifier stage 2 of 4 UA0L30VM Typical Performance Two Tone Performance @ 20 GHz Delta frequency = 1MHz Absolute Maximum Ratings* Parameter Description Minimum Maximum Vd1 (V) First Drain Voltage - 9 Vd2 (V) Second Drain Voltage - 9 Vd3 (V) Third Drain Voltage - 9 Id1 (mA) First Drain Current - 250 Id3 (mA) Second Drain Current - 250 Id3 (mA) Third Drain Current - 400 Vg1 (V) First Gate Voltage –1.5 1 Vg2 (V) Second Gate Voltage –1.5 1 Vg3 (V) Third Gate Voltage –1.5 1 Storage Temperature (C) -55 125 Operating Case Temperature (C) -25 85 Lead Soldering** (C) - 260° for 3 sec. RF Input Power (dBm) - 20 RF connector torque requirement (in-lb) - 8 Recommended Operating Bias Noise Figure vs. Frequency Parameter Typical Vd1=7V, Vg1= -0.15V Id1=72mA Vd2=7V, Vg2= -0.15V Id2=72mA Vd3=7V, Vg3= -0.05 Id3=236mA Power Dissipation 2.7W Id3 (mA) Second Drain Current Id3 (mA) Third Drain Current P1db and Psat vs. Frequency *Operation beyond the values listed under the Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the recommended Operating Bias is not implied. Prolonged use at the absolute maximum rating conditions may affect device reliability. **The use of a heat sink between the component body and the solder joint is highly recommended. SMD-00067 Rev H Subject to Change Without Notice 3 of 4 UA0L30VM Physical Dimensions and Pin Assignment Physical Characteristics (all measurements in inches[mm]) Tolerance typically +/- 0.0025in (+/- 0.0635mm) DC pin diameter is 0.03in [0.76mm] Table 1: UA0L30VM Pin Definition Pin Function Operational Notes RFin RF Input 2.92mm Connector (f) standard RFout RF Output 2.92mm Connector (f) standard 1 (Vg1) 1st stage gate bias Adjust for optimum gain 2 (Vg2) 2nd stage gate bias Adjust for optimum gain 3 (Vg3) 3rd stage gate bias Adjust for optimum gain 4 NC Not Connected 5 (Vd1) 1st stage drain bias Set at typical operating specification 6 (Vd2) 2nd stage drain bias Set at typical operating specification 7 (Vd3) 3rd stage drain bias Set at typical operating specification 8 NC Not Connected Bias Recommendations (in order): 1) Set gate bias to recommended values; 2) Apply Bias Drains; 3) Adjust bias for optimum gain (maximum gm) Versatile Bias Board (TE1B) Available. Please visit our website for more information SMD-00067 Rev H Subject to Change Without Notice 4 of 4 UA0L30VM Information contained in this document is proprietary to Microsemi. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has approximately 3,400 employees globally. Learn more at www.microsemi.com. © 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. SMD-00067 Rev H Subject to Change Without Notice 5 of 5