UM2100_09

UM2100 TM ® ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available DESCRIPTION UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30MHz) and below. As series configured switches, these long lifetime (25μs typical) diodes can control up to 2.5 kW, CW in a 50 ohm system. In HF band, insertion loss is less than 0.25dB and isolation is greater than 32dB (off-state). The UM2100 series offers the lowest distortion performance in both transmit and receive modes. Less than 50 mA forward bias is requires to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic is flat down to 2 MHz. In attenuator configuration, the UM2100 produces extremely low distortion at low values of attenuator control current, and very low insertion loss (0.2dB) in the “0dB” attenuator state. KEY FEATURES  HF band (2-30 MHz) PIN www.MICROSEMI.com  Long Lifetime (25μs typical)  High Power ( 1kW, CW)  High Isolation (32dB)  Low Loss (0.25dB)  Very Low Distortion (IP3=60dBm)  Voltage ratings to 1000 V  RoHS compliant packaging 1 Available (use UMX2101B, etc.) IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Package A B E C D SM ALL ALL ALL O Conditions 25 C Pin Temperature ½ in. total length to 25 C Contact Free Air 25 C Stud Temperature 25 C Stud Temperature 25 C End Cap Temperature 1 us pulse (Single) Storage Temperature (TOP) Operating Temperature (TOP) O O O (PD ) Power Dissapation (W) 25 12 2.5 25 18.75 15 100KW ( Θ )Thermal Resistance ( OC/W) 50V 12.5 The UM2100 series of products can be supplied with a RoHS compliant finish (UMX2100) or with a 90/10 Sn/Pb finish. Consult factory for details. 1 O 6 8 10 APPLICATIONS/BENEFITS  Isolated stud package available  Surface mount package available  Soldering temperature: o 260 C for 10 seconds maximum UM2100 UM2100 -65 OC to + 175 OC -65 OC to + 175 OC Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products P age 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UM2100 TM ® ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available VOLTAGE RATINGS @ 25C (unless otherwise specified) Part Number Reverse Voltage @ 10uA (V) UM2101 100 UM2102 200 UM2104 400 UM2106 600 UM2108 800 UM2110 1000 . www.MICROSEMI.com ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Parameter Symbol Conditions MIN. Total Capacitance CT VR=100V, F= 1 MHz Series Resistance RS If = 100 mA, F= 2 MHz Carrier Lifetime TL IF = 10 mA/100 V 20 Reverse Current IR VR = Voltage rating Intermodulation Distortion IP3 P=2W total, IF=25mA 50 F1 = 1.999 MHz F2 = 2.001 MHz 1.0 W/tone TYPICAL 1.9 1.0 25 60 MAX. 2.5 2.0 10 Units pF Ohms μs μA dBm Intermodulation Distortion Test Circuit DC current supply * SI GNAL GENERAT OR * POWER SPLT ER IT RFC f 1 SPECTR ANALYZER ELECTRICALS ELECTRICALS * f 2 SI GNAL GENERAT R O * RFC * May be controlled with the IEEE-488 bus circuit. Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products P age 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UM2100 TM ® ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available TYPICAL RS VS IF Rs versus If TYPICAL 102 f = 2 MHz TYPICAL RS / REACTANCE VS FREQ www.MICROSEMI.com RESISTANCE / REACTANCE VERSUS FREQUENCY TYPICAL 2.0 RESISTANCE / REACTANCE (Ohms) If = 100 mA 10 1 Rs (Ohms) 1.5 RESISTANCE 1.0 100 0.5 REACTANCE 10-1 10-1 100 101 102 0.0 If (mA) -0.5 102 103 104 105 106 107 FREQUENCY (Hz) POWER/TONE VS IF POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT TYPICAL 40 F1 = F - 1 KHz F2 = F + 1 KHz 35 65 70 CAPACITANCE VS VOLTAGE POWER LEVEL/TONE [dBm] CAPACITANCE VERSUS VOLTAGE TYPICAL 20 10 KHz 18 100 KHz CAPACITANCE (pF) 30 60 IP3 [dBm] 2 MHz 1 MHz 500 KHz250 KHz 150 KHz 16 14 200 KHz 12 10 8 6 4 1 MHz 400 KHz 25 55 20 50 15 100 101 102 45 2 0 10-1 2 MHz 4 MHz 10 MHz 100 101 102 If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA] Vr (V) GRAPHS Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products P age 3 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UM2100 TM ® ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available I/V VS TEMP www.MICROSEMI.com MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE TYPICAL 10 1 100 10-1 10-2 10-3 10-4 10-5 10-6 0.0 0.5 1.0 1.5 150C--------------------------125C If (A) ---------------100C --------------75C -----25C Vf (V) GRAPHS GRAPHS Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products P age 4 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UM2100 TM ® ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available PACKAGE STYLE ‘A’ PACKAGE STYLE ‘B’ www.MICROSEMI.com PACKAGE STYLE ‘C’ PACKAGE STYLE ‘CR’ PACKAGE STYLE ‘D’ PACKAGE STYLE ‘DR’ MECHANICAL Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products P age 5 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UM2100 TM ® ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available PACKAGE STYLE ‘E’ PACKAGE STYLE ‘SM’ www.MICROSEMI.com STYLE ‘SM’ FOOTPRINT NOTES: 1 2 These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at least as wide as the terminals themselves, assuming accuracy of placement within 0.005” If the mounting method chosen requires use of an adhesive separate from the solder compound, a round (or square) spot of cement as shown should be centrally located. MECHANICAL MECHANICAL Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products P age 6 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748