UM9701_06

UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode KEY FEATURES DESCRIPTION W WW . Microsemi . C OM The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design results in both forward and reverse bias. These PIN diodes are characterized for low current drain RF and microwave switch applications particularly for digital filter switch designs. The construction and geometry of these devices provide good voltage and power handling capability. These devices are constructed using a metallurgical full face bond to both surfaces of the silicon chip. A glass enclosure houses this bond in a reliable and hermetic package. The axial leads are attached to refractory pins and do not touch the glass enclosure. Environmentally these, and all Microsemi PIN diodes, can withstand thermal cycling from -195 °C to + 300 °C and exceed all military environmental specifications for shock, vibration, acceleration, and moisture resistance. Specified low distortion Low Forward Resistance High Reverse Resistance High Voltage Capability Good Power Handling Microsemi Ruggedness and reliability Compatible with automatic insertion equipment IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPLICATIONS/BENEFITS Little or no Bias required. Available in leaded or surface mount packages. RoHS compliant packaging available: use UMX9701B, etc. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Reverse Voltage AVERAGE Power Dissipation Free Air at 25 °C Average Power Dissipation ½ “ (12.7 mm) Total lead Length to 25 °C Contacts Storage Temperature Operating Temperature Symbol VR PA PA T stg T op Value 100 500 2.5 Derate linearly To 175 °C -65 to 175 -65 to 175 Unit Volts mW Watts ºC ºC UM9701 UM9701 Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 1 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode W WW . Microsemi . C OM Electrical Specifications Test Series Resistance (MAX) Total Capacitance (MAX) Parallel Resistance (MIN) Carrier Lifetime (MIN) Reverse Current (MAX) Forward Voltage (MAX) Forward Bias Third Order IM Distortion (MAX) Reverse Bias Third Order IM Distortion (MAX) Symbol RS CT RP τ IR VF R 2ab/a R 2ab/a UM9701 0.8 Ω 1.8 pF 100 kΩ 1.5 µs 10 µA 0.8 V -90 dB -90 dB Conditions F = 100 MHz, IF = 10 mA F = 1 MHz, VR = 50 V F = 100 MHz, VR = 50 V IF = 10 mA VR = 100 V IF = 10 mA IF = 10 mA PA = PB = +20 dBm fA = 43 MHz, fB = 44 MHz V R = 50 V PA = PB = +20 dBm fA = 43 MHz, fB = 44 MHz TYPICAL SERIES RESISTANCE VS FORWARD CURRENT 101 Rs SEREIES RESISTANCE (Ohms) 100 F = 100 MHz ELECTRICAL ELECTRICAL 10-1 10 0 10 1 10 2 FORWARD CURRENT (mA) Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 2 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode W WW . Microsemi . C OM TYPICAL DC CHARACTERISTIC 102 FORWARD CURRENT (mA) 101 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE (V) TYPICAL CAPACITANCE CHARACTERISTIC 5.0 4.5 Ct CAPACITANCE (pF) 4.0 3.5 1 MHz 3.0 10 MHz 2.5 2.0 1.5 1.0 0.5 0.0 10-1 100 101 102 100 MHz 20 MHz ELECTRICAL ELECTRICAL REVERSE VOLTAGE (V) Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 3 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode W WW . Microsemi . C OM TYPICAL PARALLEL RESISTANCE VS REVERSE VOLTAGE 6 10 Rp PARALLEL RESISTANCE (Ohms) F = 10 MHz----- 105 F = 20 MHz-------- ----F = 100 MHz --------F = 50 MHz 4 10 103 10-1 100 101 102 REVERSE VOLTAGE (V) TYPICAL FORWARD BIAS INTERMODULATION DISTORTION VERSUS NOMINAL CARRIER FREQUENCY DISTORTION BELOW CARRIER (dB) 120 110 100 90 80 70 60 P = 20 dBm per Channel 50 If = 10 mA 40 30 20 1 10 100 Third Oder Second Order ELECTRICAL ELECTRICAL ELECTRICAL ELECTRICAL NOMINAL CARRIER FREQUENCY (MHz) Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 4 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode W WW . Microsemi . C OM TYPICAL THIRD ORDER INTERMODULATION DISTORTION (R 2ab/a) VERSUS FORWARD BIAS CURRENT DISTORTION BELOW CARRIER (dB) 120 Fa = 43 MHz 110 Fb = 44 MHz 100 Fb = 7.6 MHz 90 80 70 60 P = 20 dBm per Channel 50 40 30 20 1 10 100 Fa = 7.4 MHz FORWARD CURRENT (mA) FORWARD BIAS THIRD ORDER INTERMODULATION DISTORTION (R 2ab/a) VS INPUT POWER PER CHANNEL 110 DISTORTION BELOW CARRIER (dB) 100 F = 43 MHz 90 F = 44 MHz 80 70 60 50 40 30 20 0 10 20 30 40 F = 7.4 MHz F = 7.6 MHz ELECTRICAL ELECTRICAL INPUT POWER PER CHANNEL (dBm) Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 5 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode W WW . Microsemi . C OM TYPICAL REVERSE BIAS INTERMODULATION DISTORTION 110 Third Order 100 90 Second Order 80 70 60 50 Fa = 43 MHz 40 Fb = 44 MHz 30 P = 20 dBm per Channel 20 1 10 50 DISTORTION BELOW CARRIER (dB) REVERSE VOLTAGE (V) MECHANICAL MECHANICAL Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 6 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode W WW . Microsemi . C OM NOTES NOTES Copyright  2001 Rev. 0.02, 2006-04-27 Microsemi Page 7