UMX5101

UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLI ANT DESCRIPTION The UMX51 01 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength (3T and greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla. KEY FEATURES ww w. MI CR OS EMI.c om  Ultra low magnetic construction  SOGO passivated chip  Thermally matched configuration  RoHS compliant 1 The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8 (J/T). The diodes are offered in a surface mount package. The SM package utilizes a square end cap to mark the cathode. The anode is round. The fully SOGO passiv ated PIN diode chip is full face metallurgically bonded to high conductive pins for lower thermal and electrical resistances. The PIN diodes feature low forward bias resistance and high zero bias impedance. The UMX5101 PIN diodes are characterized at 64, 128, and 300 MHz. The UMX5101 meets RoHS requirements per EU Directive 2002/95/EC.  Low capacitance at 0 V bias  Low conductance at 0 V bias  Metallurgical bond  Fused-in-glass construction ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit  Non cavity design  Available in surface mount package.  Compatible with automatic insertion equipment V 1- These devices are supplied with V ºC ºC Silver terminations. Other terminal finishes may be available on request. Consult factory for detai ls. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Storage Temperature Operating Temperature Non -Repetitive Peak VRRM VRWM VR V R (RMS) T stg T op 100 100 100 75 -65 to +175 -65 to +150 THERMAL CHARACTERISTICS AT 25º C (UNLESS OTHERWISE SPECIFIED) Thermal Resistance UMX5101SM θ 20 ºC/Watt APPLICATIONS/BENEFITS  High B Field (3T+) in bore APPLICATIONS:  Active or semi -active (not passive)  MR blocking circuits  MR detuning circuits  MR disable circuits  MR receiver protector circuits IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: www.MICROSEMI.com UMX 5101 U MX 5101 Copyright  2006 Rev. A, 2006- 12-28 Microsemi Lowell Division 75 Technology Drive, Lowell, MA. 01851, 978- 442- 5600, Fax: 978- 937- 3748 Page 1 UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLI ANT ELECTRICAL PARAMETERS @ 25 (UNLESS OTHERWISE SPECIFIED) C ww w. MI CR OS EMI.c om Parameter Forward Voltage (Note 1) Reverse Break Down Voltage Reverse Current Inductance Symbol VF VBR IR Ls Conditions IF = 100 m A I R = 10 uA VR = 100 V Min Typ. 0. 82 Max 1.0 Units V V 100 10 800 uA pH Magnetic moment @ 7T m @ 1T 2E-8 J/T 5E-8 - 2.7E-11 1.2E-9 -2.4E -7 1.0E-5 2.5 1.0 10 800 30 1000 0. 8 2 2. 5 1.0 Ω us 3.0 1.2 kΩ pF Mass Susceptibility χ ρ @ 7T @ 1T m /kg 3 Volume Susceptibility χ >1T to 7T