UMX5101_09

UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT DESCRIPTION 0B KEY FEATURES  Ultra low magnetic construction  SOGO passivated chip  Thermally matched configuration  RoHS compliant 1  Low capacitance at 0 V bias  Low conductance at 0 V bias  Metallurgical bond  Fused-in-glass construction The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength (3T and greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla. www.MICROSEMI.com The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8 (J/T). The diodes are offered in a surface mount package. The SM package utilizes a square end cap to mark the cathode. The anode is round. The fully SOGO passivated PIN diode chip is full face metallurgically bonded to high conductive pins for lower thermal and electrical resistances. The PIN diodes feature low forward bias resistance and high zero bias impedance. The UMX5101 PIN diodes are characterized at 64, 128, and 300 MHz. The UMX5101 meets RoHS requirements per EU Directive 2002/95/EC. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Storage Temperature Operating Temperature Non-Repetitive Peak Symbol VRRM VRWM VR V R (RMS) T stg T op Value 100 100 100 75 -65 to +175 -65 to +150 Unit  Non cavity design  Available in surface mount package.  Compatible with automatic insertion equipment V V ºC ºC 1- These devices are supplied with Silver terminations. Other terminal finishes may be available on request. Consult factory for details. THERMAL CHARACTERISTICS AT 25º C (UNLESS OTHERWISE SPECIFIED) Thermal Resistance UMX5101SM θ HU APPLICATIONS/BENEFITS ºC/Watt U 20 IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com  High B Field (3T+) in bore APPLICATIONS:  Active or semi-active (not passive)  MR blocking circuits  MR detuning circuits  MR disable circuits  MR receiver protector circuits UMX5101 UMX5101 Copyright  2006 Rev: 2009-01-19 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT ELECTRICAL PARAMETERS @ 25C (UNLESS OTHERWISE SPECIFIED) www.MICROSEMI.com Parameter Forward Voltage (Note 1) Reverse Break Down Voltage Reverse Current Inductance Symbol VF VBR IR Ls Conditions IF = 100 mA IR = 10 uA VR = 100 V Min Typ. 0.82 Max 1.0 Units V V 100 10 800 uA pH Magnetic moment m @ 7T @ 1T 2E-8 5E-8 -2.7E-11 1.2E-9 -2.4E-7 1.0E-5 2.5 1.0 10 800 30 1000 0.8 2 2.5 1.0 3.0 1.2 J/T Mass Susceptibility χρ @ 7T @ 1T m3/kg Volume Susceptibility χ >1T to 7T