UMX5601_10

UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT DESCRIPTION The UMX5601 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength (3T and greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla. The UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 (J/T). The diodes are offered in a surface mount package. The SM package utilizes a round end cap to mark the anode. The cathode is square. The fully passivated PIN diode chip is full face metallurgically bonded to shortened high conductive pins for lower thermal and electrical resistances. The PIN diodes feature low forward bias resistance and high zero bias impedance. The UMX5601 PIN diodes are characterized at 64, 128, and 300 MHz. The UMX5601SM meets RoHS requirements per EU Directive 2002/95/EC. IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com TM KEY FEATURES  Ultra low magnetic construction  SOGO passivated chip  Thermally matched configuration  RoHS compliant 1  Low capacitance at 0 V bias  Low conductance at 0 V bias  Metallurgical bond  Fused-in-glass construction  Non cavity design  Available in surface mount package.  Compatible with automatic insertion equipment V V ºC ºC 1- These devices are supplied with Silver terminations. Other terminal finishes may be available on request. Consult factory for details. www.MICROSEMI.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Storage Temperature Operating Temperature Non-Repetitive Peak Symbol VRRM VRWM VR V R (RMS) T stg T op Value 100 100 100 75 -65 to +175 -65 to +150 Unit THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance UMX5601SM Symbol θ Value 2 Unit ºC/Watt APPLICATIONS/BENEFITS  High B Field (3T+) in bore APPLICATIONS:  Active or semi-active (not passive)  MR blocking circuits  MR detuning circuits UMX5601 UMX5601  MR disable circuits  MR receiver protector circuits Copyright  2005 Rev: 2010-02-03 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Parameter Forward Voltage Reverse Break Down Voltage Reverse Current Inductance Symbol VF VBR IR Ls Conditions IF = 100 mA IR = 10 uA VR = 100 V Min Typ. 0.75 Max 1.0 10 Units www.MICROSEMI.com V V uA pH 100 900 Magnetic moment Mass Susceptibility Volume Susceptibility Capacitance Parallel Resistance Series Resistance Lifetime m χρ χ CT RP RS @ 7T @ 1T @ 7T @ 1T >1T to 7T