UPS560E3

UPS560e3 5 A Schottky Barrier Rectifier DESCRIPTION KEY FEATURES W WW . Microsemi . C OM This UPS560e3 in the Powermite3 package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, the Powermite3® package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique locking tab act as an efficient heat path to the heat-sink mounting. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ® Very low thermal resistance package RoHS Compliant with e3 suffix part number Guard-ring-die construction for transient protection Efficient heat path with Integral locking bottom metal tab Low forward voltage Full metallic bottom eliminates flux entrapment Compatible with automatic insertion Low profile-maximum height of 1mm ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =90 ºC Storage Temperature Junction Temperature Symbol VRRM VRWM VR V R (RMS) Io IFSM TSTG TJ Value Unit APPLICATIONS/BENEFITS Switching and Regulating Power Supplies. Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Reduces reverse recovery loss with low IRM Small foot print 190 X 270 mils (1:1 Actual size) See mounting pad details on pg 3 MECHANICAL & PACKAGING 60 42 5 100 -55 to +150 -55 to +125 V V A A ºC ºC THERMAL CHARACTERISTICS Thermal Resistance Junction-to-case (bottom) Junction to ambient (1) • RθJC RθJA 3.2 65 ºC/ Watt ºC/ Watt • (1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print Powermite 3™ • • • • • CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 FINISH: Annealed matte-Tin plating over copper and readily solderable per MILSTD-750 method 2026 (consult factory for Tin-Lead plating) POLARITY: See figure (left) MARKING: S560• WEIGHT: 0.072 gram (approx.) Package dimension on last page Tape & Reel option: 16 mm tape per Standard EIA-481-B, 5000 on 13” reel UPS560e3 UPS560e3 Note: 1 Short duration test pulse used to minimize self – heating effect. Copyright © 2007 10-15-2007 REV E Microsemi Page 1 UPS560e3 5 A Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) WWW . Microsemi . C OM Parameter Forward Voltage (Note 1) Symbol Conditions IF = 5 A , IF = 5 A , IF = 8 A , IF = 8 A , Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC Tj = 125 ºC Min Typ. 0.65 0.56 0.74 0.64 Max 0.69 0.60 0.78 0.68 Units VFm Reverse Break Down Voltage (Note 1) Reverse Current (Note1) Irm Capacitance CT V VBR IR = 0.2 mA VR = 60 V, Tj = 25ºC VR = 60 V, Tj =125 ºC VR = 4 V; F = 1 MHZ 60 2 0.6 150 200 20 V μA mA pF GRAPHS UPS560e3 UPS560e3 Copyright © 2007 10-15-2007 REV E Microsemi Page 2 UPS560e3 5 A Schottky Barrier Rectifier W WW . Microsemi . C OM NOTE 1: TA = TC at case bottom where RθJC =2.5º C/W and RθCA = 0º C/W (infinite heat sink). NOTE 2: Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RθJA in range of 20-35° C/W. NOTE 3: Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RθJA in range of 65°C/W. See PACKAGE & MOUNTING PAD DIMENSIONS (inches) UPS560e3 UPS560e3 Copyright © 2007 10-15-2007 REV E Microsemi Page 3