VRF141MP

VRF141 VRF141MP 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 80 V • 150W with 22dB Typical Gain @ 30MHz, 28V • 150W with 13dB Typical Gain @ 175MHz, 28V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Voltage Replacement for MRF141 • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF141(MP) 80 20 ±40 300 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 60V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 5.0 2.9 3.6 4.4 Min 80 0.9 1.0 1.0 1.0 Typ Max Unit V mA μA mhos V Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.60 Unit °C/W Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 28V f = 1MHz Min Typ 400 050-4942 Rev D 9-2010 Max Unit 375 50 pF CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Functional Characteristics Symbol GPS GPS η IMD(d3) IMD(d11) ψ Parameter f 1= 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP f1 = 175MHz, VDD = 28V, IDQ = 250mA, Pout = 150W f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles 1 VRF141(MP) Min 16 Typ 20 13 40 45 -30 -60 -28 Max Unit dB % dB No Degradation in Output Power Class A Characteristics Symbol GPS IMD(d3) IMD(d9-d13) Test Conditions f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP Min Typ 23 -50 -75 dB Max Unit 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 60 13V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 10V 9V 8V 7V 6V 5V 4V 0 V 5 10 15 20 25 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 40 35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 250 μs PULSE TEST