VRF148AMP

VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 170 V • 30W with 20dB Typical Gain @ 30MHz, 50V • 30W with 16dB Typical Gain @ 175MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Voltage Replacement for MRF148A • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF148A(MP) 170 6 ±40 115 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 1mA) On State Drain Voltage (ID(ON) = 2.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 2.5A) Gate Threshold Voltage (VDS = 10V, ID = 10mA) 0.8 2.9 3.6 4.4 Min 170 3.0 5.0 0.1 1.0 Typ Max Unit V mA μA mhos V Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 1.52 Unit 050-4943 Rev C 9-2010 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 160 40 2.6 VRF148A(MP) Max Unit pF Functional Characteristics Symbol GPS GPS η η IMD(d3) IMD(d11) ψ Parameter f1 = 30MHz, VDD = 50V, IDQ = 100mA, Pout = 30W f1 = 175MHz, VDD = 50V, IDQ = 100mA, Pout = 30W f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, 30 WPEP f1 = 30MHz, VDD = 50V, IDQ = 100mA, 30 WCW f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, Pout = 30WPEP 1 f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, Pout = 30WPEP f1= 30MHz, f2 = 30.001MHz ,VDD = 50V, IDQ = 100mA, Pout = 300WPEP 30:1 VSWR - All Phase Angles Min Typ 18 16 40 50 -35 -60 -28 Max Unit dB % dB No Degradation in Output Power Class A Characteristics Symbol GPS IMD(d3) IMD(d9-d13) Test Conditions f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP Min Typ 20 -50 -70 dB Max Unit 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 60 13V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 ID, DRAIN CURRENT (A) 10V 9V 8V 7V 6V 5V 4V 5 10 15 20 V , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 100 Ciss Coss C, CAPACITANCE (pF) ID, DRAIN CURRENT (V) 0 25 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 250 μs PULSE TEST