VRF150MP

VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174 FEATURES • Improved Ruggedness V(BR)DSS = 170V • 150W with 11dB Typical Gain @ 150MHz, 50V • 150W with 18dB Typical Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Voltage Replacement for MRF150 • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF150(MP) 170 16 ±40 300 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 4.5 2.9 3.6 4.4 Min 170 Typ 180 2.0 3.0 1.0 1.0 Max Unit V mA μA mhos V Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.60 Unit °C/W 050-4936 Rev F 9-2010 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 420 210 35 VRF150(MP) Max Unit pF Functional Characteristics Symbol GPS GPS ηD IMD(d3) IMD(d11) ψ Parameter f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f = 150MHz, VDD = 50V, IDQ = 250mA, Pout = 150W f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1VSWR - All Phase Angles 1 Min Typ 18 11 50 -32 -60 Max Unit dB % dBc No Degradation in Output Power Class A Characteristics Symbol GPS IMD(d3) IMD(d9-d13) 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Test Conditions Min Typ 20 Max Unit VDD = 50V, IDQ = 3A, Pout = 150WPEP, f1 = 30MHz, f2 = 30.001MHz -50 -75 dB Typical Performance Curves 35 30 25 20 15 10 5 0 14V 10V 9V 8V 7V 6V 5V 4V 0 V 8 12 16 20 24 28 32 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 20 Ciss ID, DRAIN CURRENT (V) Coss C, CAPACITANCE (pF) 10 IDMax Pdmax 35 30 25 ID, DRAIN CURRENT (A) 20 15 250 μs PULSE TEST