VRF151

VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174 FEATURES • Improved Ruggedness V(BR)DSS = 170V • 150W with 22dB Typical Gain @ 30MHz, 50V • 150W with 14dB Typical Gain @ 175MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Voltage Replacement for MRF151 • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF151 170 16 ±40 300 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 5.0 2.9 3.6 4.4 Min 170 Typ 180 2.0 3.0 1 1.0 Max Unit V mA μA mhos V Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.60 Unit °C/W 050-4937 Rev E 12-2007 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 150V f = 1MHz Min Typ 375 200 12 Max VRF151 Unit pF Functional Characteristics Symbol GPS GPS ηD IMD(d3) IMD(d11) ψ Parameter f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles 1 Min 18 Typ 22 14 50 -30 -60 Max Unit dB % dBc No Degradation in Output Power Class A Characteristics Symbol GPS IMD(d3) IMD(d9-d13) Test Conditions f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f = 30MHz, VDD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP Min Typ 20 -50 -75 dB Max Unit 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 25 10V 20 ID, DRAIN CURRENT (A) 9V 8V 7V ID, DRAIN CURRENT (A) 20 TJ= 25°C 15 10 5 0 TJ= 125°C 14V 30 25 TJ= -55°C 250 μs PULSE TEST