VRF151E VRF151EMP
50V, 150W, 175MHz
RF POWER VERTICAL MOSFET
The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
M174A
FEATURES
• Enhanced Package for 30% higher PD • Improved Ruggedness V(BR)DSS = 170V • 150W with 22dB Typical Gain @ 30MHz, 50V • 150W with 14dB Typical Gain @ 175MHz, 50V • Excellent Stability & Low IMD • Available in Matched Pairs • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • Replacement for SD2931-10 w/higher BV • RoHS Compliant
Maximum Ratings
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature
All Ratings: TC =25°C unless otherwise specified
VRF151E(MP) 170 16 ±40 390 -65 to 150 200 Unit V A V W °C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 5.0 2.9 3.6 4.4 Min 170 Typ 180 2.0 3.0 1 1.0 Max Unit V mA μA mhos V
Thermal Characteristics
Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.45 Unit °C/W
050-4955 Rev B 9-2010
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 150V f = 1MHz Min Typ 375 200 12
VRF151E(MP)
Max Unit
pF
Functional Characteristics
Symbol GPS GPS ηD IMD(d3) IMD(d11) ψ Parameter f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles
1
Min 18
Typ 22 14 50 -30 -60
Max
Unit dB % dBc
No Degradation in Output Power
Class A Characteristics
Symbol GPS IMD(d3) IMD(d9-d13) Test Conditions f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f = 30MHz, VDD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP Min Typ 20 -50 -75 dB Max Unit
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
25 10V 20 ID, DRAIN CURRENT (A) 9V 8V 7V ID, DRAIN CURRENT (A) 20 TJ= 25°C 15 10 5 0 TJ= 125°C 14V 30 25 TJ= -55°C
250 μs PULSE TEST