VRF152MP

VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174 FEATURES • Improved Ruggedness V(BR)DSS = 130V • 150W with 22dB Typical Gain @ 30MHz, 50V • 150W with 14dB Typical Gain @ 175MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • Low Rds Replacement for MRF151/ BLF177/ SD2941 • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF152(MP) 130 20 ±40 300 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS RDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 50mA) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 10A) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 5.0 2.9 6.2 3.6 4.4 Min 130 0.13 0.20 50 1.0 Typ Max Unit V Ohms μA μA mhos V Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.60 Unit °C/W 050-4950 Rev B 9-2010 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 383 215 20 VRF152(MP) Max Unit pF Functional Characteristics Symbol GPS GPS ηD IMD(d3) IMD(d11) ψ Parameter f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles 1 Min 18 Typ 22 14 50 -30 -60 Max Unit dB % dBc No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 45 40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 0 V VGS = 5V 7V 15V 40 13V 10V 9V 8V ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 250 μs PULSE TEST