VRF154FL VRF154FLMP
50V, 600W, 80MHz
RF POWER VERTICAL MOSFET
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. S
D
S
G
FEATURES
• Improved Ruggedness V(BR)DSS = 170V • Designed for 2 - 100MHz Operation • 600W with 17dB Typical Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • Nitride Passivated • Economical Flangeless Package • Refractory Gold Metallization • High Voltage Replacement for MRF154 • RoHS Compliant
Maximum Ratings
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF154FL(MP) 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 40A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 16 2.9 3.6 4.4 Min 170 Typ 180 3.0 5.0 4.0 4.0 Max Unit V mA μA mhos V
Thermal Characteristics
Symbol RθJC RθJHS Characteristic Junction to Case Thermal Resistance Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min
Typ
Max 0.13
Unit °C/W
050-4939 Rev F 9-2010
0.22
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 1750 775 135
VRF154FL(MP)
Max Unit
pF
Functional Characteristics
Symbol GPS ηD IMD(d3) Parameter f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP
1
Min
Typ 17 45 -25
Max
Unit dB % dBc
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
160 140 120 ID, DRAIN CURRENT (A) 100 80 60 40 20 0 V 0 5 10 15 20 9.0V 8.0V 7.0V 6.0V 5.0V VGS = 4.0V 25 30 14V 140 120 11V 100 ID, DRAIN CURRENT (A) 80 60 TJ= 125°C 40 20 0 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics
250 μs PULSE TEST
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