VRF157FL

VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. S D S G FEATURES • Improved Ruggedness V(BR)DSS = 170V • 600W with 21dB Typical Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • RoHS Compliant • Nitride Passivated • Economical Flangeless Package • Refractory Gold Metallization • High Voltage Replacement for MRF157 Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF157FL 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 16 2.9 3.6 4.4 Min 170 Typ 180 3.0 5.0 4.0 4.0 Max Unit V mA μA mhos V Thermal Characteristics Symbol RθJC RθJHS Characteristic Junction to Case Thermal Resistance Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) Min Typ Max 0.13 Unit °C/W 0.22 050-4940 Rev E 10-2009 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 1580 810 65 VRF157FL Max Unit pF Functional Characteristics Symbol GPS ηD IMD(d3) Parameter f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP 1 Min 17 Typ 21 45 -25 Max Unit dB % dBc 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 45 40 35 ID, DRAIN CURRENT (A) 4.5V ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 0 V DS(ON) 100 5.5V 90 80 70 60 50 40 30 20 10 0 0 250 μs PULSE TEST