VRF157FL VRF157FLMP
50V, 600W, 80MHz
RF POWER VERTICAL MOSFET
The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. S
D
S
G
FEATURES
• Improved Ruggedness V(BR)DSS = 170V • 600W with 21dB Typical Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • Nitride Passivated • Economical Flangeless Package • Refractory Gold Metallization • High Voltage Replacement for MRF157 • RoHS Compliant
Maximum Ratings
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF157FL(MP) 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 16 2.9 3.6 4.4 Min 170 Typ 180 3.0 5.0 4.0 4.0 Max Unit V mA μA mhos V
Thermal Characteristics
Symbol RθJC RθJHS Characteristic Junction to Case Thermal Resistance Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min
Typ
Max 0.13
Unit °C/W
0.22
050-4940 Rev F 9-2010
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 1580 810 65
VRF157FL(MP)
Max Unit
pF
Functional Characteristics
Symbol GPS ηD IMD(d3) Parameter f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP
1
Min 17
Typ 21 45 -25
Max
Unit dB % dBc
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
45 40 35 ID, DRAIN CURRENT (A) 4.5V ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 0 V
DS(ON)
100 5.5V 90 80 70 60 50 40 30 20 10 0 0
250 μs PULSE TEST
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